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1N60P PDF预览

1N60P

更新时间: 2024-11-18 06:26:31
品牌 Logo 应用领域
DIOTECH 小信号肖特基二极管
页数 文件大小 规格书
2页 907K
描述
SMALL SIGNAL SCHOTTKY DIODE

1N60P 数据手册

 浏览型号1N60P的Datasheet PDF文件第2页 
1N60 THRU 1N60P  
SMALL SIGNAL SCHOTTKY DIODE  
Reverse Voltage - 40 to 45 Volts  
Forward Current - 0.03 / 0.05 Ampere  
FEATURES  
DO-35  
Metal-on-silicon junction, majority carrier conduction  
High current capability, Low forward voltage drop  
Extremely low reverse current Ir  
Ultra speed switching characteristics  
Small temperature coefficient of forward characteristics  
Satisfactory Wave detection efficiency  
For use in RECORDER TV RADIO TELEPHONE as  
detectors, super high speed switching c rcuits,  
small current rectifier  
MECHANICAL DATA  
Case: DO-35 glass case  
Polarity : Color band denotes cathode end  
Mounting Position : Any  
Weight : 0.13 grams  
All Dimensions in mm  
ABSOLUTE RATINGS(LIMITING VALUES)  
Value  
Units  
Parameters  
Symblos  
1N60  
1N60P  
Repetitive Peak Reverse Voltage  
40  
30  
45  
50  
Volts  
mA  
mA  
C
VRRM  
IF  
Forward Continuous Current  
TA=25 C  
150  
400  
Peak Forward Surge Current(t=1S)  
IFSM  
TSTG/TJ  
TL  
Storage and junction Temperature Range  
-65 to+125  
230  
Maximum Lead Temperature for Soldering during 10S at 4mm from Case  
C
ELECTRICAL CHARACTERISTICS  
Value  
Typ.  
Parameters  
Symblos  
VF  
Test Conditions  
Units  
Max.  
Min.  
1N60  
1N60P  
1N60  
0.32  
0.24  
0.65  
0.65  
1.0  
0.5  
0.5  
1.0  
1.0  
5.0  
10.0  
IF=1mA  
Forward Voltage  
Reverse Current  
Volts  
IF=30mA  
IF=200mA  
1N60P  
1N60  
1N60P  
1N60  
IR  
VR=15V  
A
5.0  
2.0  
6.0  
VR=1V f=1MHz  
VR=10V f=1MHz  
Junction Capacitance  
pF  
CJ  
1N60P  
I
L
Detection Efficiency(See diagram 4)  
Reverse Recovery time  
V=3V f=30MHz C =10pF RL=3.8k  
60  
R
F
I =I =1mA Irr=1mA Rc=100  
ns  
1
trr  
R JA  
C/W  
Junction Ambient Thermal Resistance  
400  

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