Datasheet > 1N60P

1N60P

更新时间： 2024-11-01 07:22:51

品牌	Logo	应用领域
TGS		二极管
页数	文件大小	规格书
2页	134K
描述
Schottky Barrier Rectifier

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中文翻译

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数据手册

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1N60P 数据手册

TIGER ELECTRONIC CO.,LTD

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1N60

1N60P

Features

•

High Reliability

Low Reverse Current and Low Forward Voltage

Marking : Cathode band and type number

Moisture Sensitivity: Level 1 per J-STD-020C

Schottky Barrier

Rectifier

•

Maximum Ratings

DO-35

•

Storage &Operating JunctionTemperature: -65℃ to +125℃

Electrical Characteristics @ 25°C Unless Otherwise Specified

Parameter

Repetitive

Peak Reverse

Voltage

Average

Forward

Symbol

Type

1N60

Value

40V

Test Condition

V_RRM

1N60P

1N60

45V

T_a= 25℃

30mA

50mA

I_F(AV)

1N60P

Current

Cathode

Mark

1N60

150mA t_p≦1s

Peak Forward

Surge Current

I_FSM

1N60P

500mA t_p≦1s

On PC board

Junction

Ambient

50mm×50mm

R_thJA

250K/W

×1.6mm

Note: 1. Lead in Glass Exemption Applied, see EU Directive Annex 5.

DIMENSIONS

INCHES

MIN

---

MIN

---

25.40

DIM

MAX

.166

.079

.020

---

MAX

4.2

2.00

.52

NOTE

1.000

---

中文翻译

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与1N60P相关器件

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1N60P-AP	MCC	获取价格	Rectifier Diode, Schottky, 1 Element, 0.05A, 45V V(RRM), Silicon, DO-35, ROHS COMPLIANT PA
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1N60PG-T92-R	UTC	获取价格	1.2A, 600V N-CHANNEL POWER MOSFET
1N60PL-T92-B	UTC	获取价格	1.2A, 600V N-CHANNEL POWER MOSFET
1N60PL-T92-K	UTC	获取价格	1.2A, 600V N-CHANNEL POWER MOSFET
1N60PL-T92-R	UTC	获取价格	1.2A, 600V N-CHANNEL POWER MOSFET
1N60P-TP	MCC	获取价格	Rectifier Diode, Schottky, 1 Element, 0.05A, 45V V(RRM), Silicon, DO-35, ROHS COMPLIANT PA
1N60PW	SEMTECH	获取价格	Schottky Barrier Diode