1N60P

更新时间： 2024-11-18 12:21:19

品牌	Logo	应用领域
鲁光 - LGE		小信号肖特基二极管
页数	文件大小	规格书
2页	184K
描述
Small Signal Schottky Diodes

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中文翻译

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技术参数
数据手册

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1N60P 技术参数

Case Style：	DO-35	IF(A)：	50
VRRM (V)：	45	IFSM (A)：	0.5
VF (V)：	1.0	@ IF (A)：	200
Maximum reverse current：	1.0	TRR(nS)：
class：	Diodes

1N60P 数据手册

1N60P

Small Signal Schottky Diodes

VOLTAGE RANGE: 45 V

CURRENT: 0.1 A

Features

DO - 35(GLASS)

Metal sillicon junction majority carrier conduction

High current capability,Low forward voltage drop

Extremely low reverse current I_R

Ultra speed switching characteristics

Small temperature coefficient of forward

fffff f characteristics

Satisfactory wave detection efficiency

For use in RECORDER. TV. RADIO. TELEPHONE

as detectors,super high speed switching circuits,

small current rectifier

Mechanical Data

Dimensions in millimeters

Case:JEDEC DO--35,glass case

Polarity: Color band denotes cathode end

Weight: Approx. 0.13 gram

ABSOLUTE RATINGS(LIMITING VALUES)

Value

Parameters

Symbols

UNITS

1N60P

Repetitive peak reverse voltage

V_RRM

I_F

Forw ard continuous current

T_A=25

500

Peak forw ard surge current (t=1s)

Storage and junction temperature range

I_FSM

T_STG/T_J

T_L

XX- 55 ---- + 125

230

Maximum lead temperature for soldering during 10s at 4mm from case

ELECTRICAL CHARACTERISTICS

Value

Parameters

Symbols

V_F

Test Conditions

UNITS

Min.

Typ.

Max.

0.5

I_F=1mA

I_F=200mA

0.24

Forward voltage

Reverse current

0.65

0.5

1.0

V_R=15V

I_R

Junction capacitance

V_R=10V f=1MHz

6.0

C_J

V=3V f=30MHz

Detection efficiency (See FIG. 4)

Reverse recovery time

60.0

C_L=10pF R_L=3.8K

I_F=I_R=1mA Irr=1mA R_C=100

1.0

t_rr

Thermal resistance junction to ambient

400

R_θ

http://www.luguang.cn

mail:lge@luguang.cn

中文翻译

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