Datasheet > 1N60P

1N60P

更新时间： 2024-11-22 14:52:59

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森美特 - SUNMATE		/
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2页	836K
描述
Switching Diodes Switch detector

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中文翻译

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数据手册

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1N60P 数据手册

1N60-1N60P

SMALL SIGNAL SCHOTTKY DIODES

DO-35(GLASS)

Features

Fast switching for high efficiency

1.0 2(26.0)

MIN.

Low reverse leakage

High forward surge current capability

High temperature soldering guaranteed

0.079(2.0)

MAX

250 C/10 seconds,0.37”5(9.5mm) lead length,

5 lbs. (2.3kg) tension

0.165 (4.2)

MAX

Mechanical Data

1.0 2(26.0)

MIN.

Case: DO-35, glass case

Polarity: Color band denotes cathode

Weight: 0.004 ounces, 0.13 grams

0.020(0.52)

TYP

Dimensions in millimeters

@ T_A= 25°C unless otherwise specified

Maximum Ratings and Electrical Characteristics

Value

SYMBOLS

Parameters

UNITS

1N60P

1N60

RRM

Repetitive peak reverse voltage

Forward continuous current TA=25 C

500

FSM

Peak forward surge current(t=1s)

150

J STG

T ,T

-65 to +125

230

Storage and junction temperature range

Maximum lead tenperature for soldering during 10s at 4mm from case

Value

SYMBOLS

Test conditions

Parameters

UNITS

Min.

Typ.

0.32

0.24

0.65

0.1

0.5

2.0

6.0

Max.

0.5

1.0

0.5

1.0

1N60

1N60P

1N60

F=1mA

Forward voltage

Reverse current

F=30mA

F=200mA

1N60P

1N60

1N60P

1N60

R=15V

R=1V f=1MHz

R=10V f=1MHz

Junction capacitance

1N60P

Detection efficiency

Reverse recovery time

I=3V f =30MHz C

=10pF R

=3.8KΩ

IF=I

R=10mA Irr=1mA

=100

Ω

θJA

Thermal resistance, junction to ambient

C/W

400

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