Datasheet > YJN60G10B

YJN60G10B

更新时间： 2024-04-09 18:59:36

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
6页	1332K
描述
TO-247

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中文翻译

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数据手册

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YJN60G10B 数据手册

RoHS

COMPLIANT

YJN60G10B

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

100V

● I_D

60A

● R_DS(ON)( at V_GS=10V)

● 100% UIS Tested

● 100% ▽VDS Tested

＜17.5 mohm

General Description

● Low R_DS(on)& FOM

● Extremely low switching loss

● Excellent stability and uniformity

● Fast switching and soft recovery

Applications

● Switching converters

● Motor drivers

● Power management

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

100

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±20

T_C=25℃

Drain Current

I_D

T_C=100℃

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

300

EAS

Tc=25℃

260

Total Power Dissipation ^C

P_D

Tc=100℃

104

Junction and Storage Temperature Range

T_J,T_STG

-55～+150

℃

■Thermal resistance

Parameter

Symbol

R_θJA

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^D

Thermal Resistance Junction-to-Case

t≤10S

Steady-State

0.4

℃/W

R_θJC

0.48

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

PREFERED P/N

Marking

DELIVERY MODE

CODE

YJN60G10B

360

1800

Tube

1 / 6

S-E436

Rev.1.0,11-Dec-20

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6

中文翻译

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