Datasheet > YJP100GP06H

YJP100GP06H

更新时间： 2024-03-03 10:09:46

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	681K
描述
TO-220

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YJP100GP06H 数据手册

RoHS

COMPLIANT

YJP100GP06H

P-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

-60 V

● I_D

-100 A

● R_DS(ON)( at V_GS=-10V)

● R_DS(ON)( at V_GS=-6V)

● 100% EAS Tested

● 100% ▽VDS Tested

＜8.8mΩ

＜10mΩ

General Description

●Split gate trench MOSFET technology

●High density cell design for low R_DS(ON)

●Excellent stability and uniformity

●Epoxy Meets UL 94 V-0 Flammability Rating

●Halogen Free

Applications

● Power management

● Portable equipment

Absolute Maximum Ratings (T =25℃ unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

-60

±18

-15

T_A=25℃

-9.5

T_A=100℃

T_C=25℃

Drain Current

I_D

-100

-63

T_C=100℃

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

-320

702

EAS

3.1

T_A=25℃

T_A=100℃

T_C=25℃

T_C=100℃

1.25

192

Total Power Dissipation ^C

P_D

Junction and Storage Temperature Range

T_J,T_STG

-55～+150

℃

■Thermal resistance

Parameter

Symbol

R_θJA

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^D

Thermal Resistance Junction-to-Case

Steady-State

℃/W

R_θJC

0.55

0.65

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

DELIVERY

MODE

PREFERED P/N

Marking

CODE

YJP100GP06H

5000

Tube

1 / 7

S-E253

Rev.1.1,12-Jan-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7

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