Datasheet > 晶体管 > 功率场效应晶体管> XP131A1235SR

XP131A1235SR

更新时间： 2024-09-18 22:11:19

品牌	Logo	应用领域
特瑞仕 - TOREX		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
4页	61K
描述
Power MOSFET

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技术参数
数据手册

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XP131A1235SR 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.82	Is Samacsys：	N
湿度敏感等级：	1	Base Number Matches：	1

XP131A1235SR 数据手册

Power MOSFET

XP131A1235SR

◆�N-Channel Power MOS FET

◆�DMOS Structure

■�

Applications

●�Notebook PCs

●�Cellular and portable phones

●�On - board power supplies

●�Li - ion battery systems

◆�Low On-State Resistance : 0.035

◆�Ultra High-Speed Switching

◆�SOP - 8 Package

Ω

(max)

■�General Description

■�Features

The XP131A1235SR is a N-Channel Power MOS FET with low on-state

resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently

set thereby saving energy.

Rds (on) = 0.035 ( Vgs = 4.5V )

Low on-state resistance :

Ω

Rds (on) = 0.048Ω ( Vgs = 2.5V )

Ultra high-speed switching

Operational Voltage :

2.5V

The small SOP-8 package makes high density mounting possible.

SOP - 8

High density mounting :

■�Pin Configuration

■�Pin Assignment

FUNCTION

Source

Gate

PIN NUMBER

PIN NAME

1 - 3

5 - 8

Drain

SOP - 8 Top View

■�Equivalent Circuit

■�Absolute Maximum Ratings

Ta=25 C

SYMBOL

RATINGS

UNITS

PARAMETER

Drain - Source Voltage

Gate - Source Voltage

Drain Current (DC)

Vdss

Vgss

+ 12

Drain Current (Pulse)

Reverse Drain Current

Continuous Channel

Idp

Idr

2.5W

Power Dissipation (note)

Channel Temperature

Storage Temperature

Tch

150

Tstg

-55 to 150

N - Channel MOS FET

( 1 device built-in )

( note ) : When implemented on a glass epoxy PCB

353

12 3 4

中文翻译

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