Datasheet > XP131A0232SR

XP131A0232SR

更新时间： 2024-09-19 07:56:51

品牌	Logo	应用领域
特瑞仕 - TOREX		/
页数	文件大小	规格书
4页	170K
描述
N-Channel Power MOS FET

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中文翻译

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技术参数
数据手册

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XP131A0232SR 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.81	湿度敏感等级：	1
Base Number Matches：	1

XP131A0232SR 数据手册

11S_09XP131A0232SR 02.9.12 3:52 PM ページ 719

Power MOS FET

NN-Channel Power MOS FET

NDMOS Structure

■Applications

GNotebook PCs

GCellular and portable phones

GOn-board power supplies

GLi-ion battery systems

NLow On-State Resistance: 0.032Ω (max)

NUltra High-Speed Switching

NSOP-8 Package

■General Description

■Features

The XP131A0232SR is an N-Channel Power MOS FET with low on-state

resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set

thereby saving energy.

Low on-state resistance : Rds(on)=0.032Ω (Vgs=4.5V)

: Rds(on)=0.045Ω (Vgs=2.5V)

: Rds(on)=0.08Ω (Vgs=1.5V)

Ultra high-speed switching

The small SOP-8 package makes high density mounting possible.

Operational Voltage

: 1.5V

High density mounting : SOP-8

■Pin Configuration

■Pin Assignment

PIN NUMBER

PIN NAME

FUNCTION

Ｓ�

Ｇ�

Ｄ�

1 ～�3

Source

Gate

5 ～�8

Drain

SOP-8�

(TOP VIEW)

■Equivalent Circuit

■Absolute Maximum Ratings

Ta=25°C

PARAMETER

SYMBOL

RATINGS

UNITS

Drain-Source Voltage

Gate-Source Voltage

Drain Current (DC)

Vdss

Vgss

Drain Current (Pulse)

Reverse Drain Current

Idp

Idr

N-Channel MOS FET�

(1 device built-in)

Continuous Channel

Power Dissipation (note)

2.5

Channel Temperature

Storage Temperature

Tch

150

°C

Tstg

-55~150

Note: When implemented on a glass epoxy PCB

719

12 3 4

中文翻译

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