XP131A0616SR

更新时间： 2024-11-07 22:11:19

品牌	Logo	应用领域
特瑞仕 - TOREX		/
页数	文件大小	规格书
4页	64K
描述
Power MOSFET

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中文翻译

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技术参数
数据手册

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XP131A0616SR 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	Is Samacsys：	N
湿度敏感等级：	1	Base Number Matches：	1

XP131A0616SR 数据手册

Power MOSFET

XP131A0616SR

■ Applications

● Notebook PCs

● Cellular and portable phones

● On-board power supplies

● Li-ion battery systems

◆ N-Channel Power MOS FET

◆ DMOS Structure

◆ Low On-State Resistance: 0.016Ω MAX

◆ Ultra High-Speed Switching

◆ SOP-8 Package

■ General Description

■ Features

The XP131A0616SR is a N-Channel Power MOS FET with low on-state

resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set

thereby saving energy.

Low on-state resistance: Rds(on)=0.016Ω(Vgs=4.5V)

Rds(on)=0.022Ω(Vgs=2.5V)

Rds(on)=0.045Ω(Vgs=1.5V)

Ultra high-speed switching

The small SOP-8 package makes high density mounting possible.

Operational Voltage: 1.5V

High density mounting: SOP-8

■ Pin Configuration

■ Pin Assignment

NUMBER

NAME

FUNCTION

1~3

Source

Gate

5~8

Drain

SOP-8

(TOP VIEW)

■ Absolute Maximum Ratings

■ Equivalent Circuit

Ta=25

PARAMETER

SYMBOL

RATINGS

UNITS

Drain-Source Voltage

Gate-Source Voltage

Drain Current (DC)

Vdss

Vgss

±8

Drain Current (Pulse)

Reverse Drain Current

Idp

Idr

Continuous Channel

Power Dissipation (note)

2.5

N-Channel MOS FET

(1 device built-in)

Channel Temperature

Storage Temperature

Tch

150

Tstg

-55~150

Note: When implemented on a glass epoxy PCB

345

12 3 4

中文翻译

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