生命周期: | Obsolete | 包装说明: | PLASTIC, BGA-209 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
最长访问时间: | 3.8 ns | JESD-30 代码: | R-PBGA-B209 |
内存密度: | 16777216 bit | 内存集成电路类型: | SRAM MODULE |
内存宽度: | 32 | 功能数量: | 1 |
端子数量: | 209 | 字数: | 524288 words |
字数代码: | 512000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 512KX32 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | BGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY | 并行/串行: | PARALLEL |
认证状态: | Not Qualified | 最大供电电压 (Vsup): | 2.625 V |
最小供电电压 (Vsup): | 2.375 V | 标称供电电压 (Vsup): | 2.5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子形式: | BALL |
端子位置: | BOTTOM | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
WED2ZLRSP01S38BI | WEDC |
获取价格 |
512K x 32/256K x 32 Dual Array Synchronous Pipeline Burst NBL SRAM |
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WED2ZLRSP01S42BC | WEDC |
获取价格 |
512K x 32/256K x 32 Dual Array Synchronous Pipeline Burst NBL SRAM |
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WED2ZLRSP01S42BI | WEDC |
获取价格 |
512K x 32/256K x 32 Dual Array Synchronous Pipeline Burst NBL SRAM |
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WED2ZLRSP01S50BC | WEDC |
获取价格 |
512K x 32/256K x 32 Dual Array Synchronous Pipeline Burst NBL SRAM |
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WED2ZLRSP01S50BI | WEDC |
获取价格 |
512K x 32/256K x 32 Dual Array Synchronous Pipeline Burst NBL SRAM |
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WED2ZLRSP01S-BC | ETC |
获取价格 |
NBL SSRAM MCP |
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WED3C7410E16M400BC | WEDC |
获取价格 |
RISC Microprocessor Multichip Package |
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WED3C7410E16M400BC | MICROSEMI |
获取价格 |
RISC Microprocessor, 400MHz, CMOS, CBGA225, 21 X 25 MM, CERAMIC, BGA-225 |
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WED3C7410E16M-400BC | MICROSEMI |
获取价格 |
400MHz, RISC PROCESSOR, CBGA225, 21 X 25 MM, CERAMIC, BGA-225 |
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WED3C7410E16M400BH9C | WEDC |
获取价格 |
7410E RISC Microprocessor HiTCETM Multichip Package |
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