Datasheet > VS-30EPH06HN3

VS-30EPH06HN3

更新时间： 2024-09-19 14:54:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	165K
描述
Hyperfast Rectifier, 30 A FRED Pt?

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VS-30EPH06HN3 数据手册

VS-30EPH06HN3

Vishay Semiconductors

www.vishay.com

Hyperfast Rectifier, 30 A FRED Pt^®

FEATURES

Base

common

cathode

• Hyperfast recovery time

• Low forward voltage drop

• 175 °C operating junction temperature

• Low leakage current

• Single diode device

• AEC-Q101 qualified, meets JESD 201

class 1A whisker test

TO-247AC modified

Cathode

Anode

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

DESCRIPTION / APPLICATIONS

I_F(AV)

30 A

600 V

1.34 V

State of the art hyperfast recovery rectifiers designed with

optimized performance of forward voltage drop, hyperfast

recovery time and soft recovery.

V_R

V_Fat I_F

The planar structure and the platinum doped life time

control guarantee the best overall performance, ruggedness

and reliability characteristics.

These devices are intended for use in PFC boost stage in

the AC/DC section of SMPS, inverters or as freewheeling

diodes.

t_rrtyp.

T_Jmax.

See Recovery table

175 °C

Package

TO-247AC modified

Single

Circuit configuration

Their extremely optimized stored charge and low recovery

current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

TEST CONDITIONS

VALUES

600

UNITS

Peak repetitive reverse voltage

Average rectified forward current

Non-repetitive peak surge current

Operating junction and storage temperatures

I_F(AV)

T_C= 116 °C

T_J= 25 °C

I_FSM

300

T_J, T_Stg

-65 to +175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

V_BR

V_R

I_R= 100 μA

I_F= 30 A

600

2.0

1.34

0.3

2.6

1.75

500

Forward voltage

V_F

I_R

I_F= 30 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 600 V

Junction capacitance

Series inductance

C_T

L_S

Measured lead to lead 5 mm from package body

3.5

Revision: 05-Nov-2018

Document Number: 94371

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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