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VS-30MQ040HM3

更新时间: 2024-12-02 14:55:39
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 129K
描述
High Performance Schottky Rectifier, 3 A

VS-30MQ040HM3 数据手册

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VS-30MQ040HM3  
Vishay Semiconductors  
www.vishay.com  
High Performance Schottky Rectifier, 3 A  
FEATURES  
• Low forward voltage drop  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Small footprint, surface mountable  
• High frequency operation  
Cathode  
Anode  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
• Meets JESD 201 class 2 whisker test  
• AEC-Q101 qualified  
SMA (DO-214AC)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
APPLICATIONS  
• Switching power supplies  
• Meter protection  
• Reverse protection for power input to PC board circuits  
• Battery isolation and charging  
• Low threshold voltage diode  
• Freewheeling or by-pass diode  
• Low voltage clamp  
IF(AV)  
3 A  
40 V  
VR  
VF at IF  
0.46 V  
IRM  
TJ max.  
20 mA at 125 °C  
150 °C  
EAS  
6.0 mJ  
Package  
SMA (DO-214AC)  
Single  
Circuit configuration  
DESCRIPTION  
The VS-30MQ040HM3 Schottky rectifier is designed to be  
used for low power applications where a reverse voltage of  
40 V is encountered and surface mountable is required.  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
VALUES  
UNITS  
IF(AV)  
VRRM  
IFSM  
VF  
Rectangular waveform  
3
40  
A
V
tp = 5 μs sine  
2 Apk, TJ = 125 °C  
Range  
330  
A
0.43  
V
TJ  
-40 to +150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-30MQ040HM3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
40  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
50 % duty cycle at TL = 89 °C, rectangular waveform  
On PC board 9 mm2 island  
(0.013 mm thick copper pad area)  
Maximum average forward current  
See fig. 4  
IF(AV)  
3
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 6  
5 μs sine or 3 μs rect. pulse  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 1 A, L = 12 mH  
Following any rated  
load condition and with  
rated VRRM applied  
330  
140  
6.0  
IFSM  
A
Non-repetitive avalanche energy  
EAS  
IAR  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
Repetitive avalanche current  
1.0  
Revision: 29-Jul-2021  
Document Number: 94841  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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