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VS-30WQ03FNTRLPBF PDF预览

VS-30WQ03FNTRLPBF

更新时间: 2024-10-30 14:45:35
品牌 Logo 应用领域
威世 - VISHAY 高功率电源二极管
页数 文件大小 规格书
7页 142K
描述
DIODE 30 V, SILICON, RECTIFIER DIODE, TO-252AA, ROHS COMPLIANT, PLASTIC, SIMILAR TO TO-252AA, DPAK-3, Rectifier Diode

VS-30WQ03FNTRLPBF 技术参数

生命周期:Obsolete零件包装代码:TO-252AA
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.69其他特性:FREE WHEELING DIODE, HIGH RELIABILITY
应用:HIGH POWER外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:535 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:30 V表面贴装:YES
技术:SCHOTTKY端子面层:MATTE TIN
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

VS-30WQ03FNTRLPBF 数据手册

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VS-30WQ03FNPbF  
Vishay Semiconductors  
www.vishay.com  
High Performance Schottky Rectifier, 3.5 A  
FEATURES  
Base  
cathode  
• Popular D-PAK outline  
• Small foot print, surface mountable  
• Low forward voltage drop  
• High frequency operation  
4, 2  
1
3
Anode  
Anode  
D-PAK (TO-252AA)  
• Guard ring for enhanced ruggedness and long term  
reliability  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
PRODUCT SUMMARY  
Package  
D-PAK (TO-252AA)  
3.5 A  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
IF(AV)  
VR  
30 V  
DESCRIPTION  
VF at IF  
IRM  
See Electrical table  
50 mA at 125 °C  
150 °C  
The VS-30WQ03FNPbF surface mount Schottky rectifier  
has been designed for applications requiring low forward  
drop and small foot prints on PC board. Typical applications  
are in disk drives, switching power supplies, converters,  
freewheeling diodes, battery charging, and reverse battery  
protection.  
TJ max.  
Diode variation  
EAS  
Single die  
8 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
3.5  
UNITS  
Rectangular waveform  
A
V
30  
tp = 5 μs sine  
3 Apk, TJ = 125 °C  
Range  
535  
A
VF  
0.35  
V
TJ  
-40 to +150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-30WQ03FNPbF  
UNITS  
Maximum DC reverse voltage  
VR  
30  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
50 % duty cycle at TC = 134 °C, rectangular waveform  
3.5  
A
Maximum peak one cycle non-repetitive  
surge current  
See fig. 7  
Following any rated load  
condition and with rated  
VRRM applied  
5 μs sine or 3 μs rect. pulse  
535  
IFSM  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 2 A, L = 4 mH  
90  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
8
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
1.0  
Revision: 14-Jan-11  
Document Number: 94197  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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