Datasheet > VS-30ETH06-M3

VS-30ETH06-M3

更新时间： 2023-12-06 20:03:31

品牌	Logo	应用领域
威世 - VISHAY		软恢复二极管超快速软恢复二极管局域网
页数	文件大小	规格书
7页	159K
描述
Hyperfast Rectifier, 30 A FRED Pt?

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VS-30ETH06-M3 数据手册

VS-30ETH06-M3

Vishay Semiconductors

www.vishay.com

Hyperfast Rectifier, 30 A FRED Pt^®

FEATURES

• Reduced Q_rrand soft recovery

• 175 °C T_Jmaximum

Base

cathode

• For PFC CRM/CCM operation

• Low forward voltage drop

• Low leakage current

• Designed and qualified according to JEDEC^®-JESD 47

Cathode

Anode

TO-220AC 2L

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION / APPLICATIONS

State of the art hyperfast recovery rectifiers designed with

optimized performance of forward voltage drop, hyperfast

recovery time and soft recovery.

PRIMARY CHARACTERISTICS

I_F(AV)

30 A

600 V

1.34 V

23 ns

V_R

The planar structure and the platinum doped life time

control guarantee the best overall performance, ruggedness

and reliability characteristics.

V_Fat I_F

t_rr(typ.)

T_Jmax.

175 °C

These devices are intended for use in PFC boost stage in the

AC/DC section of SMPS, inverters or as freewheeling

diodes.

Package

TO-220AC 2L

Single

Circuit configuration

Their extremely optimized stored charge and low recovery

current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

TEST CONDITIONS

VALUES

600

UNITS

Peak repetitive reverse voltage

Average rectified forward current

Non-repetitive peak surge current

Operating junction and storage temperatures

I_F(AV)

T_C= 103 °C

T_J= 25 °C

I_FSM

200

T_J, T_Stg

-65 to +175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

V_BR

V_R

I_R= 100 μA

I_F= 30 A

600

2.0

1.34

0.3

2.6

1.75

500

Forward voltage

V_F

I_R

I_F= 30 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 600 V

Junction capacitance

Series inductance

C_T

L_S

Measured lead to lead 5 mm from package body

8.0

Revision: 11-Jan-2022

Document Number: 96182

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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