Datasheet > VS-30ETU12-M3

VS-30ETU12-M3

更新时间： 2024-09-19 14:55:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	133K
描述
Ultrafast Soft Recovery Diode, 30 A FRED Pt?

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VS-30ETU12-M3 数据手册

VS-30ETU12-M3

Vishay Semiconductors

www.vishay.com

Ultrafast Rectifier, 30 A FRED Pt^®

FEATURES

Base cathode

• Ultrafast and soft recovery

• Optimized forward voltage drop

• 175 °C maximum operating junction temperature

• Polyimide passivation

• Rugged design

Anode

Cathode

• Good thermal performance

• Meets JESD 201 class 1A whisker test

TO-220AC 2L

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

DESCRIPTION / APPLICATIONS

I_F(AV)

30 A

1200 V

2.05 V

49 ns

Ultrafast recovery rectifiers designed with optimized

performance of forward voltage drop, recovery time, and

soft recovery. Polyimide passivated, planar structure, and

the platinum doped life time control guarantee, ruggedness,

reliability characteristics, and solid value proposition for

efficiency and thermal performance.

V_R

V_Fat I_Fat 125 °C

t_rr

T_Jmax.

175 °C

Package

TO-220AC 2L

Single

Circuit configuration

These devices are intended for use in boost stage in the

AC/DC section of SMPS, high frequency output rectification

of battery charger, inverters for solar inverters, or as

freewheeling diodes in motor drive.

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

TEST CONDITIONS

T_C= 100 °C, D = 0.50

T_C= 25 °C, t_p= 10 ms, sine wave

VALUES

1200

UNITS

Repetitive peak reverse voltage

Average rectified forward current

Repetitive peak forward current

Non-repetitive peak surge current

Operating junction and storage temperature

I_F(AV)

I_FRM

I_FSM

240

T_J, T_Stg

-55 to +175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX. UNITS

V_BR

V_R

Breakdown voltage, blocking voltage

I_R= 500 μA

1200

I_F= 30 A

2.15

2.05

2.68

Forward voltage

V_F

I_R

I_F= 30 A, T_J= 125 °C

V_R= V_Rrated

2.45

145

μA

Reverse leakage current

T_J= 125 °C, V_R= V_Rrated

V_R= 200 V

320

Junction capacitance

Series inductance

C_T

L_S

Measured to lead 5 mm from package body

Revision: 11-Jan-2022

Document Number: 95990

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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与VS-30ETU12-M3相关器件

型号	品牌	获取价格	描述	数据表
VS-30ETU12THN3	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 30 A FRED Pt?
VS-30L30CT-1PBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 30V V(RRM), Silicon, TO-262AA, HALOGEN
VS-30L30CT-1TRLPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 30V V(RRM), Silicon, TO-262AA, HALOGEN FREE
VS-30L30CT-1TRRPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 30V V(RRM), Silicon, TO-262AA, HALOGEN FREE
VS-30L30CT-N3	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode
VS-30L30CTSTRLPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 30V V(RRM), Silicon, HALOGEN FREE AND
VS-30MQ040HM3	VISHAY	获取价格	High Performance Schottky Rectifier, 3 A
VS-30MQ040-M3	VISHAY	获取价格	High Performance Schottky Rectifier, 3 A
VS-30MQ040-M3/5AT	VISHAY	获取价格	DIODE 40 V, SILICON, RECTIFIER DIODE, HALOGEN FREE AND ROHS COMPLIANT, SIMILAR TO D-64, SM
VS-30PT100	VISHAY	获取价格	High Performance Generation 5.0 Schottky Rectifier, 30 A

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