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VS-30EPH06L-N3 PDF预览

VS-30EPH06L-N3

更新时间: 2024-12-01 21:12:07
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
7页 143K
描述
Rectifier Diode,

VS-30EPH06L-N3 技术参数

生命周期:ActiveReach Compliance Code:unknown
Factory Lead Time:22 weeks风险等级:5.72
二极管类型:RECTIFIER DIODEBase Number Matches:1

VS-30EPH06L-N3 数据手册

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VS-30EPH06L-N3  
Vishay Semiconductors  
www.vishay.com  
Hyperfast Rectifier, 30 A FRED Pt®  
FEATURES  
Base  
cathode  
• Hyperfast recovery time  
2
• Low forward voltage drop  
• 175 °C operating junction temperature  
• Low leakage current  
2
1
• Single diode device  
• Designed and qualified according to JEDEC®-JESD 47  
3
1
3
TO-247AD 2L  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Cathode  
Anode  
DESCRIPTION / APPLICATIONS  
PRIMARY CHARACTERISTICS  
State of the art hyperfast recovery rectifiers designed with  
optimized performance of forward voltage drop, hyperfast  
recovery time and soft recovery.  
The planar structure and the platinum doped life time  
control guarantee the best overall performance, ruggedness  
and reliability characteristics.  
These devices are intended for use in PFC boost stage in  
the AC/DC section of SMPS, inverters or as freewheeling  
diodes.  
IF(AV)  
30 A  
600 V  
1.34 V  
VR  
VF at IF  
trr typ.  
TJ max.  
See Recovery table  
175 °C  
Package  
TO-247AD 2L  
Single  
Circuit configuration  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
TEST CONDITIONS  
VALUES  
600  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Operating junction and storage temperatures  
V
IF(AV)  
TC = 116 °C  
TJ = 25 °C  
30  
A
IFSM  
300  
TJ, TStg  
-65 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 30 A  
600  
-
-
V
-
-
-
-
-
-
2.0  
1.34  
0.3  
60  
2.6  
1.75  
50  
500  
-
Forward voltage  
VF  
IR  
IF = 30 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
μA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
Junction capacitance  
Series inductance  
CT  
LS  
33  
pF  
nH  
Measured lead to lead 5 mm from package body  
3.5  
-
Revision: 09-Jul-2019  
Document Number: 96626  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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