VS-30EPH06L-N3
Vishay Semiconductors
www.vishay.com
Hyperfast Rectifier, 30 A FRED Pt®
FEATURES
Base
cathode
• Hyperfast recovery time
2
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
2
1
• Single diode device
• Designed and qualified according to JEDEC®-JESD 47
3
1
3
TO-247AD 2L
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Cathode
Anode
DESCRIPTION / APPLICATIONS
PRIMARY CHARACTERISTICS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in
the AC/DC section of SMPS, inverters or as freewheeling
diodes.
IF(AV)
30 A
600 V
1.34 V
VR
VF at IF
trr typ.
TJ max.
See Recovery table
175 °C
Package
TO-247AD 2L
Single
Circuit configuration
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VRRM
TEST CONDITIONS
VALUES
600
UNITS
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
V
IF(AV)
TC = 116 °C
TJ = 25 °C
30
A
IFSM
300
TJ, TStg
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
VBR
VR
,
IR = 100 μA
IF = 30 A
600
-
-
V
-
-
-
-
-
-
2.0
1.34
0.3
60
2.6
1.75
50
500
-
Forward voltage
VF
IR
IF = 30 A, TJ = 150 °C
VR = VR rated
Reverse leakage current
μA
TJ = 150 °C, VR = VR rated
VR = 600 V
Junction capacitance
Series inductance
CT
LS
33
pF
nH
Measured lead to lead 5 mm from package body
3.5
-
Revision: 09-Jul-2019
Document Number: 96626
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000