Datasheet > VN2410M

VN2410M

更新时间： 2024-09-20 23:45:07

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
4页	458K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 240V V(BR)DSS \| 200MA I(D) \| TO-237

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VN2410M 数据手册

VN2450

N-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

(max)

I_D(ON)

(min)

BV_DGS

TO-92

TO-243AA*

Die**

500V

13Ω

0.5A

VN2450N3

VN2450N8

VN2450NW

Same as SOT-89 Product Supplied on 2000 piece carrier tape reels.

** Die in wafer form.

Product marking for TO-243AA:

Features

VN4E❋

Where ❋ = 2-week alpha date code

❏

Free from secondary breakdown

Low input and output leakage

Low C_ISSand fast switching speeds

High input impedance and high gain

Advanced DMOS Technology

These low threshold enhancement-mode (normally-off) transis-

tors utilize a vertical DMOS structure and Supertex’s well-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally-induced secondary breakdown.

Applications

❏

Motor controls

Converters

Amplifiers

Switches

Power supply circuits

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Package Options

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

BV_DSS

BV_DGS

± 20V

TO-243AA

(SOT-89)

S G D

TO-92

Operating and Storage Temperature

-55°C to +150°C

300°C

Soldering Temperature*

Note: See Package Outline section for dimensions.

* Distance of 1.6 mm from case for 10 seconds.

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

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与VN2410M相关器件

型号	品牌	获取价格	描述	数据表
VN2410M-1	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.19A I(D), 240V, 1-Element, N-Channel, Silicon, Met
VN2410M-1-18	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.19A I(D), 240V, 1-Element, N-Channel, Silicon, Met
VN2410M18-1	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.19A I(D), 240V, 1-Element, N-Channel, Silicon, Met
VN2410M18-2	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.19A I(D), 240V, 1-Element, N-Channel, Silicon, Met
VN2410M-1TA	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.19A I(D), 240V, 1-Element, N-Channel, Silicon, Met
VN2450	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
VN2450N3	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
VN2450N3-G	SUPERTEX	获取价格	Power Field-Effect Transistor, TO-92, GREEN PACKAGE-3
VN2450N8	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
VN2450NW	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs

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