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VN2460N3 PDF预览

VN2460N3

更新时间： 2024-09-20 22:36:27
品牌 Logo 应用领域
超科 - SUPERTEX 晶体小信号场效应晶体管开关
页数 文件大小 规格书
4页 458K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

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中文翻译

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VN2460N3 技术参数

是否Rohs认证：不符合生命周期：Obsolete
零件包装代码：TO-92包装说明：CYLINDRICAL, O-PBCY-W3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.25
Is Samacsys：N其他特性：LOW THRESHOLD
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：600 V
最大漏极电流 (ID)：0.16 A最大漏源导通电阻：25 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：25 pF
JEDEC-95代码：TO-92JESD-30 代码：O-PBCY-W3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：CYLINDRICAL
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：1 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：WIRE
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

VN2460N3 数据手册

 浏览型号VN2460N3的Datasheet PDF文件第2页浏览型号VN2460N3的Datasheet PDF文件第3页浏览型号VN2460N3的Datasheet PDF文件第4页 
VN2460  
N-Channel Enhancement-Mode  
Vertical DMOS FETs  
Ordering Information  
Order Number / Package  
TO-243AA*  
BVDSS  
/
RDS(ON)  
(max)  
ID(ON)  
(min)  
BVDGS  
TO-92  
Die**  
600V  
20Ω  
0.25A  
VN2460N3  
VN2460N8  
VN2460NW  
*
Same as SOT-89 Product Supplied on 2000 piece carrier tape reels.  
** Die in wafer form.  
Product marking for TO-243AA:  
Features  
❏
❏
❏
❏
❏
❏
❏
Free from secondary breakdown  
Low power drive requirement  
Ease of paralleling  
VN4F❋  
Where ❋ = 2-week alpha date code  
Low CISS and fast switching speeds  
Excellent thermal stability  
Advanced DMOS Technology  
These low threshold enhancement-mode (normally-off) transis-  
tors utilize a vertical DMOS structure and Supertex’s well-proven  
silicon-gate manufacturing process. This combination produces  
devices with the power handling capabilities of bipolar transistors  
and with the high input impedance and positive temperature  
coefficient inherent in MOS devices. Characteristic of all MOS  
structures, these devices are free from thermal runaway and  
thermally-induced secondary breakdown.  
Integral Source-Drain diode  
High input impedance and high gain  
Applications  
❏
❏
❏
❏
❏
❏
Motor controls  
Supertex’s vertical DMOS FETs are ideally suited to a wide range  
of switching and amplifying applications where high breakdown  
voltage, high input impedance, low input capacitance, and fast  
switching speeds are desired.  
Converters  
Amplifiers  
Switches  
Power supply circuits  
Drivers (relays, hammers, solenoids, lamps,  
memories, displays, bipolar transistors, etc.)  
Package Options  
Absolute Maximum Ratings  
Drain-to-Source Voltage  
Drain-to-Gate Voltage  
Gate-to-Source Voltage  
D
G
D
S
BVDSS  
BVDGS  
± 20V  
TO-243AA  
S G D  
(SOT-89)  
TO-92  
Operating and Storage Temperature  
-55°C to +150°C  
Soldering Temperature*  
300°C  
* Distance of 1.6 mm from case for 10 seconds.  
Note: See Package Outline section for dimensions.  
11/12/01  
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability  
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to  
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the  
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.  
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