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VN2460N3-G PDF预览

VN2460N3-G

更新时间： 2024-11-10 13:15:31
品牌 Logo 应用领域
超科 - SUPERTEX 晶体小信号场效应晶体管开关
页数 文件大小 规格书
4页 458K
描述
Small Signal Field-Effect Transistor, 0.16A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN

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VN2460N3-G 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Transferred零件包装代码：TO-92
包装说明：CYLINDRICAL, O-PBCY-W3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：7.86Is Samacsys：N
其他特性：LOW THRESHOLD配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：600 V最大漏极电流 (ID)：0.16 A
最大漏源导通电阻：25 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：25 pFJEDEC-95代码：TO-92
JESD-30 代码：O-PBCY-W3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：CYLINDRICAL峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：0.74 W
认证状态：Not Qualified子类别：FET General Purpose Powers
表面贴装：NO端子面层：MATTE TIN
端子形式：WIRE端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

VN2460N3-G 数据手册

 浏览型号VN2460N3-G的Datasheet PDF文件第2页浏览型号VN2460N3-G的Datasheet PDF文件第3页浏览型号VN2460N3-G的Datasheet PDF文件第4页 
VN2460  
N-Channel Enhancement-Mode  
Vertical DMOS FETs  
Ordering Information  
Order Number / Package  
TO-243AA*  
BVDSS  
/
RDS(ON)  
(max)  
ID(ON)  
(min)  
BVDGS  
TO-92  
Die**  
600V  
20Ω  
0.25A  
VN2460N3  
VN2460N8  
VN2460NW  
*
Same as SOT-89 Product Supplied on 2000 piece carrier tape reels.  
** Die in wafer form.  
Product marking for TO-243AA:  
Features  
❏
❏
❏
❏
❏
❏
❏
Free from secondary breakdown  
Low power drive requirement  
Ease of paralleling  
VN4F❋  
Where ❋ = 2-week alpha date code  
Low CISS and fast switching speeds  
Excellent thermal stability  
Advanced DMOS Technology  
These low threshold enhancement-mode (normally-off) transis-  
tors utilize a vertical DMOS structure and Supertex’s well-proven  
silicon-gate manufacturing process. This combination produces  
devices with the power handling capabilities of bipolar transistors  
and with the high input impedance and positive temperature  
coefficient inherent in MOS devices. Characteristic of all MOS  
structures, these devices are free from thermal runaway and  
thermally-induced secondary breakdown.  
Integral Source-Drain diode  
High input impedance and high gain  
Applications  
❏
❏
❏
❏
❏
❏
Motor controls  
Supertex’s vertical DMOS FETs are ideally suited to a wide range  
of switching and amplifying applications where high breakdown  
voltage, high input impedance, low input capacitance, and fast  
switching speeds are desired.  
Converters  
Amplifiers  
Switches  
Power supply circuits  
Drivers (relays, hammers, solenoids, lamps,  
memories, displays, bipolar transistors, etc.)  
Package Options  
Absolute Maximum Ratings  
Drain-to-Source Voltage  
Drain-to-Gate Voltage  
Gate-to-Source Voltage  
D
G
D
S
BVDSS  
BVDGS  
± 20V  
TO-243AA  
S G D  
(SOT-89)  
TO-92  
Operating and Storage Temperature  
-55°C to +150°C  
Soldering Temperature*  
300°C  
* Distance of 1.6 mm from case for 10 seconds.  
Note: See Package Outline section for dimensions.  
11/12/01  
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability  
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to  
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the  
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.  
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VN2460N3-G 替代型号

型号 品牌 替代类型 描述 数据表
TP2540N3-G SUPERTEX

类似代替

 Small Signal Field-Effect Transistor, 0.086A I(D), 400V, 1-Element, P-Channel, Silicon, Me
VN4012L-G SUPERTEX

类似代替

 Small Signal Field-Effect Transistor, 0.16A I(D), 400V, 1-Element, N-Channel, Silicon, Met
ZVP0545A DIODES

功能相似

 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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