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VN2460N3-GP003 PDF预览

VN2460N3-GP003

更新时间： 2024-09-22 00:58:31
品牌 Logo 应用领域
超科 - SUPERTEX 开关晶体管
页数 文件大小 规格书
6页 727K
描述
N-Channel Enhancement-Mode Vertical DMOS FET

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中文翻译

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VN2460N3-GP003 技术参数

生命周期：Transferred包装说明：CYLINDRICAL, O-PBCY-T3
Reach Compliance Code：unknown风险等级：5.63
Is Samacsys：N配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：600 V最大漏源导通电阻：25 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：25 pF
JEDEC-95代码：TO-92JESD-30 代码：O-PBCY-T3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：CYLINDRICAL
极性/信道类型：N-CHANNEL表面贴装：NO
端子形式：THROUGH-HOLE端子位置：BOTTOM
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

VN2460N3-GP003 数据手册

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Supertex inc.  
VN2460  
N-Channel Enhancement-Mode  
Vertical DMOS FET  
Features  
► Free from secondary breakdown  
► Low power drive requirement  
► Ease of paralleling  
► Low CISS and fast switching speeds  
► Excellent thermal stability  
► Integral source-drain diode  
► High input impedance and high gain  
General Description  
This enhancement-mode (normally-off) transistor utilizes  
a vertical DMOS structure and Supertex’s well-proven  
silicon-gate manufacturing process. This combination  
produces a device with the power handling capabilities of  
bipolar transistors and with the high input impedance and  
positive temperature coefficient inherent in MOS devices.  
Characteristic of all MOS structures, this device is free  
from thermal runaway and thermally induced secondary  
breakdown.  
Applications  
► Motor controls  
► Converters, amplifiers, and switches  
► Power supply circuits  
Supertex’s vertical DMOS FETs are ideally suited to a  
wide range of switching and amplifying applications where  
high breakdown voltage, high input impedance, low input  
capacitance, and fast switching speeds are desired.  
► Drivers (relays, hammers, solenoids, lamps,  
memories, displays, bipolar transistors, etc.)  
Ordering Information  
Product Summary  
RDS(ON)  
ID(ON)  
Part Number  
Package Options  
Packing  
BVDSS/BVDGS  
(max)  
(min)  
VN2460N3-G  
TO-92  
1000/Bag  
2000/Reel  
2000/Reel  
2000/Reel  
2000/Reel  
2000/Reel  
600V  
20Ω  
2500mA  
VN2460N3-G P002 TO-92  
VN2460N3-G P003 TO-92  
VN2460N3-G P005 TO-92  
VN2460N3-G P013 TO-92  
VN2460N3-G P014 TO-92  
Pin Configuration  
DRAIN  
VN2460N8-G  
TO-243AA (SOT-89) 2000/Reel  
DRAIN  
-G denotes a lead (Pb)-free / RoHS compliant package  
Refer to ‘P0xx’ Tape & Reel Specs for P002, P003, P005, P013, and P014 TO-92  
Taping Specifications and Winding Styles  
SOURCE  
DRAIN  
GATE  
SOURCE  
Contact factory for Wafer / Die availablity.  
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.  
GATE  
Absolute Maximum Ratings  
TO-92  
TO-243AA (SOT-89)  
Parameter  
Value  
Product Marking  
Drain-to-source voltage  
Drain-to-gate voltage  
Gate-to-source voltage  
Operating and storage temperature  
BVDSS  
BVDGS  
SiVN  
2 4 6 0  
YYWW  
YY = Year Sealed  
WW = Week Sealed  
±20V  
-55OC to +150OC  
= “Green” Packaging  
Absolute Maximum Ratings are those values beyond which damage to the device  
may occur. Functional operation under these conditions is not implied. Continuous  
operation of the device at the absolute rating level may affect device reliability. All  
voltages are referenced to device ground.  
Package may or may not include the following marks: Si or  
TO-92  
Typical Thermal Resistance  
W = Code for week sealed  
VN4FW  
= “Green” Packaging  
Package may or may not include the following marks: Si or  
TO-243AA (SOT-89)  
Package  
θja  
TO-92  
132OC/W  
133OC/W*  
TO-243AA (SOT-89)  
* Mounted on FR5 Board, 25mm x 25mm x 1.57mm  
Doc.# DSFP-VN2460  
B082013  
Supertex inc.  
www.supertex.com  
123456

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