Datasheet > VN2460N3-P014

VN2460N3-P014

更新时间： 2024-09-22 00:53:47

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
7页	565K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

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VN2460N3-P014 数据手册

VN2460

N-Channel Enhancement-Mode

Vertical DMOS FETs

Features

General Description

► Free from secondary breakdown

► Low power drive requirement

► Ease of paralleling

► Low C_ISSand fast switching speeds

► Excellent thermal stability

► Integral source-drain diode

This enhancement-mode (normally-off) transistor utilizes a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces a device with

the power handling capabilities of bipolar transistors and with

the high input impedance and positive temperature coefﬁcient

inherent in MOS devices. Characteristic of all MOS structures,

this device is free from thermal runaway and thermally induced

secondary breakdown.

► High input impedance and high gain

Applications

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

► Motor controls

► Converters

► Ampliﬁers

► Switches

► Power supply circuits

► Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Ordering Information

Package Options

Device

R_DS(ON)

I_D(ON)

BV_DSS/BV_DGS

(max)

(Ω)

(min)

(mA)

TO-243AA

(V)

TO-92

(SOT-89)

VN2460

VN2460N3-G

VN2460N8-G

600

250

-G indicates package is RoHS compliant (‘Green’)

Pin Conﬁgurations

DRAIN

SOURCE

Absolute Maximum Ratings

Parameter

SOURCE

DRAIN

GATE

Value

BV_DSS

GATE

TO-92 (N3)

TO-243AA (SOT-89) (N8)

Drain-to-source voltage

Drain-to-gate voltage

Product Marking

BV_DGS

SiVN

2 4 6 0

Y YWW

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

Gate-to-source voltage

±20V

Operating and storage temperature

Soldering temperature^*

-55°C to +150°C

+300°C

Package may or may not include the following marks: Si or

TO-92 (N3)

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

W = Code for week sealed

VN4FW

= “Green” Packaging

Package may or may not include the following marks: Si or

TO-243AA (SOT-89) (N8)

Distance of 1.6mm from case for 10 seconds.

● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

12 3 4 5 6 7

中文翻译

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与VN2460N3-P014相关器件

型号	品牌	获取价格	描述	数据表
VN2460N3-P014-G	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
VN2460N8	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
VN2460N8-G	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
VN2460N8VN2460N3-G	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
VN2460NW	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
VN24A19000J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
VN2780LG	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| SO
VN3012L	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 300V V(BR)DSS \| TO-92
VN3012LP001	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.18A I(D), 300V, 1-Element, N-Channel, Silicon, Met
VN3012LP002	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.18A I(D), 300V, 1-Element, N-Channel, Silicon, Met

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