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VN2450NW PDF预览

VN2450NW

更新时间： 2024-11-09 22:36:51
品牌 Logo 应用领域
超科 - SUPERTEX /
页数 文件大小 规格书
4页 458K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

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中文翻译

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VN2450NW 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Transferred零件包装代码：DIE
包装说明：UNCASED CHIP, X-XUUC-NReach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.72
其他特性：LOW THRESHOLD配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：500 V最大漏源导通电阻：13 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：25 pF
JESD-30 代码：X-XUUC-NJESD-609代码：e0
元件数量：1工作模式：ENHANCEMENT MODE
封装主体材料：UNSPECIFIED封装形状：UNSPECIFIED
封装形式：UNCASED CHIP峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子面层：TIN LEAD
端子形式：NO LEAD端子位置：UPPER
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

VN2450NW 数据手册

 浏览型号VN2450NW的Datasheet PDF文件第2页浏览型号VN2450NW的Datasheet PDF文件第3页浏览型号VN2450NW的Datasheet PDF文件第4页 
VN2450  
N-Channel Enhancement-Mode  
Vertical DMOS FETs  
Ordering Information  
Order Number / Package  
BVDSS  
/
RDS(ON)  
(max)  
ID(ON)  
(min)  
BVDGS  
TO-92  
TO-243AA*  
Die**  
500V  
13Ω  
0.5A  
VN2450N3  
VN2450N8  
VN2450NW  
*
Same as SOT-89 Product Supplied on 2000 piece carrier tape reels.  
** Die in wafer form.  
Product marking for TO-243AA:  
Features  
VN4E❋  
Where ❋ = 2-week alpha date code  
❏
❏
❏
❏
Free from secondary breakdown  
Low input and output leakage  
Low CISS and fast switching speeds  
High input impedance and high gain  
Advanced DMOS Technology  
These low threshold enhancement-mode (normally-off) transis-  
tors utilize a vertical DMOS structure and Supertex’s well-proven  
silicon-gate manufacturing process. This combination produces  
devices with the power handling capabilities of bipolar transistors  
and with the high input impedance and positive temperature  
coefficient inherent in MOS devices. Characteristic of all MOS  
structures, these devices are free from thermal runaway and  
thermally-induced secondary breakdown.  
Applications  
❏
❏
❏
❏
❏
❏
Motor controls  
Converters  
Amplifiers  
Switches  
Power supply circuits  
Supertex’s vertical DMOS FETs are ideally suited to a wide range  
of switching and amplifying applications where high breakdown  
voltage, high input impedance, low input capacitance, and fast  
switching speeds are desired.  
Drivers (relays, hammers, solenoids, lamps,  
memories, displays, bipolar transistors, etc.)  
Package Options  
D
Absolute Maximum Ratings  
Drain-to-Source Voltage  
Drain-to-Gate Voltage  
Gate-to-Source Voltage  
G
D
S
BVDSS  
BVDGS  
± 20V  
TO-243AA  
(SOT-89)  
S G D  
TO-92  
Operating and Storage Temperature  
-55°C to +150°C  
300°C  
Soldering Temperature*  
Note: See Package Outline section for dimensions.  
* Distance of 1.6 mm from case for 10 seconds.  
11/12/01  
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability  
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to  
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the  
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.  
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