VN2450N3-G

更新时间： 2024-11-10 13:01:19

品牌	Logo	应用领域
超科 - SUPERTEX		晶体小信号场效应晶体管开关
页数	文件大小	规格书
4页	458K
描述
Power Field-Effect Transistor, TO-92, GREEN PACKAGE-3

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技术参数
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VN2450N3-G 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	TO-92
包装说明：	CYLINDRICAL, O-PBCY-T3	针数：	3
Reach Compliance Code：	compliant	风险等级：	8.55
JEDEC-95代码：	TO-92	JESD-30 代码：	O-PBCY-T3
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	CYLINDRICAL
峰值回流温度（摄氏度）：	260	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

VN2450N3-G 数据手册

VN2450

N-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

(max)

I_D(ON)

(min)

BV_DGS

TO-92

TO-243AA*

Die**

500V

13Ω

0.5A

VN2450N3

VN2450N8

VN2450NW

Same as SOT-89 Product Supplied on 2000 piece carrier tape reels.

** Die in wafer form.

Product marking for TO-243AA:

Features

VN4E❋

Where ❋ = 2-week alpha date code

❏

Free from secondary breakdown

Low input and output leakage

Low C_ISSand fast switching speeds

High input impedance and high gain

Advanced DMOS Technology

These low threshold enhancement-mode (normally-off) transis-

tors utilize a vertical DMOS structure and Supertex’s well-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally-induced secondary breakdown.

Applications

❏

Motor controls

Converters

Amplifiers

Switches

Power supply circuits

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Package Options

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

BV_DSS

BV_DGS

± 20V

TO-243AA

(SOT-89)

S G D

TO-92

Operating and Storage Temperature

-55°C to +150°C

300°C

Soldering Temperature*

Note: See Package Outline section for dimensions.

* Distance of 1.6 mm from case for 10 seconds.

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

12 3 4

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与VN2450N3-G相关器件

型号	品牌	获取价格	描述	数据表
VN2450N8	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
VN2450NW	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
VN2460	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
VN2460_13	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
VN2460N3	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
VN2460N3-G	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.16A I(D), 600V, 1-Element, N-Channel, Silicon, Met
VN2460N3-GP002	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
VN2460N3-GP003	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
VN2460N3-GP005	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
VN2460N3-GP013	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET

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