型号 | 品牌 | 获取价格 | 描述 | 数据表 |
VF30 | MICROSEMI |
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Rectifier Diode, 1 Element, 0.08A, 30000V V(RRM), Silicon, PLASTIC PACKAGE-2 | |
VF30100C | VISHAY |
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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A | |
VF30100C-E3/4W | VISHAY |
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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A | |
VF30100C-M3 | VISHAY |
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Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
VF30100C-M3/4W | VISHAY |
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Rectifier Diode, | |
VF30100S | VISHAY |
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High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A | |
VF30100S_15 | VISHAY |
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High-Voltage Trench MOS Barrier Schottky Rectifier | |
VF30100S-E3/45 | VISHAY |
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High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A | |
VF30100S-E3/4W | VISHAY |
获取价格 |
High-Voltage Trench MOS Barrier Schottky Rectifier | |
VF30100S-E3-4W | VISHAY |
获取价格 |
High-Voltage Trench MOS Barrier Schottky Rectifier |