Datasheet > VF30100C-M3

VF30100C-M3

更新时间： 2024-11-09 14:52:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	81K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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数据手册

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VF30100C-M3 数据手册

VF30100C-M3

Vishay General Semiconductor

www.vishay.com

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.455 V at I_F= 5 A

FEATURES

• Trench MOS Schottky technology

TMBS^®

ITO-220AB

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters and reverse battery protection.

VF30100C

PIN 1

PIN 2

MECHANICAL DATA

PIN 3

Case: ITO-220AB

Molding compound meets UL 94 V-0 flammability rating

PRIMARY CHARACTERISTICS

Base P/N-M3

- halogen-free, RoHS compliant, and

I_F(AV)

2 x 15 A

100 V

commercial grade

V_RRM

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

I_FSM

160 A

V_Fat I_F= 15 A

T_Jmax.

Package

0.63 V

150 °C

Polarity: As marked

ITO-220AB

Mounting Torque: 10 in-lbs maximum

Diode variation

Common cathode

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

I_F(AV)

VF30100C

UNIT

Maximum repetitive peak reverse voltage

100

per device

per diode

Maximum average forward rectified current (fig. 1)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

160

Non-repetitive avalanche energy at T_J= 25 °C, L = 60 mH per diode

Peak repetitive reverse current at t_p= 2 μs, 1 kHz, T_J= 38 °C 2 °C

Voltage rate of change (rated V_R)

E_AS

I_RRM

210

1.0

dV/dt

V_AC

10 000

1500

V/μs

Isolation voltage from terminal to heatsink t = 1 min

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

°C

Revision: 03-Jul-17

Document Number: 89203

For technical questions within your region: DiodesAmericas@vishay.com, Diodes Asia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与VF30100C-M3相关器件

型号	品牌	获取价格	描述	数据表
VF30100C-M3/4W	VISHAY	获取价格	Rectifier Diode,
VF30100S	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A
VF30100S_15	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
VF30100S-E3/45	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A
VF30100S-E3/4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
VF30100S-E3-4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
VF30100SG	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A
VF30100SG-E3/4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A
VF30120C	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
VF30120C_10	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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