Datasheet > VF30120C

VF30120C

更新时间： 2024-11-08 05:54:39

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
5页	168K
描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VF30120C 数据手册

New Product

V30120C, VF30120C, VB30120C & VI30120C

Vishay General Semiconductor

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V = 0.50 V at I = 5 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

TO-220AB

ITO-220AB

• Low forward voltage drop, low power

losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB

and TO-262AA package)

V30120C

VF30120C

PIN 1

PIN 2

CASE

PIN 2

PIN 3

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TO-263AB

TO-262AA

TYPICAL APPLICATIONS

For use in high frequency inverters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

VB30120C

VI30120C

MECHANICAL DATA

PIN 1

PIN 2

PIN 1

PIN 2

Case: TO-220AB, ITO-220AB, TO-263AB and

TO-262AA

HEATSINK

PIN 3

Epoxy meets UL 94V-0 flammability rating

PRIMARY CHARACTERISTICS

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

I_F(AV)

2 x 15 A

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

Polarity: As marked

V_RRM

120 V

150 A

0.68 V

150 °C

I_FSM

V_Fat I_F= 15 A

T_Jmax.

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V30120C VF30120C VB30120C VI30120C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

120

Maximum average forward rectified current

(Fig. 1)

per device

per diode

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

150

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

V_AC

1500

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

°C

Document Number: 89041

Revision: 19-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5

中文翻译

下载PDF

与VF30120C相关器件

型号	品牌	获取价格	描述	数据表
VF30120C_10	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VF30120C-E3/4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A
VF30120C-M3-4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VF30120S	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A
VF30120S-E3	VISHAY	获取价格	High Voltage Trench MOS Barrier Schottky Rectifier
VF30120S-E3/4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A
VF30120SG	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
VF30120SG_10	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
VF30120SG_15	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
VF30120SG-E3/4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A

与VF30120C相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

20
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

18
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

43
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

37

产品中心

服务支持

精选活动

关于我们

帮助中心

VF30120C

VF30120C 数据手册

与VF30120C相关器件

与VF30120C相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

VF30120C

VF30120C 数据手册

与VF30120C相关器件

与VF30120C相关文章

您还可以找

您在本页遇到什么问题？