VF30120S-E3/4W

更新时间： 2024-11-08 06:01:23

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
5页	166K
描述
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A

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VF30120S-E3/4W 数据手册

V30120S, VF30120S, VB30120S & VI30120S

Vishay General Semiconductor

High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V = 0.43 V at I = 5 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

TO-220AB

ITO-220AB

• Low forward voltage drop, low power

losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

V30120S

VF30120S

• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB

and TO-262AA package)

PIN 1

PIN 3

PIN 1

PIN 2

CASE

PIN 2

PIN 3

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TO-263AB

TO-262AA

TYPICAL APPLICATIONS

For use in high frequency inverters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

VB30120S

VI30120S

MECHANICAL DATA

PIN 1

PIN 3

PIN 2

HEATSINK

Case: TO-220AB, ITO-220AB, TO-263AB and

TO-262AA

Epoxy meets UL 94V-0 flammability rating

PRIMARY CHARACTERISTICS

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for commercial grade, meets JESD 201 class

1A whisker test

I_F(AV)

V_RRM

I_FSM

30 A

120 V

300 A

V_Fat I_F= 30 A

T_Jmax.

0.74 V

150 °C

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V30120S

VF30120S

VB30120S

VI30120S

UNIT

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (Fig. 1)

V_RRM

120

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

300

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

V_AC

1500

- 40 to + 150

Operating junction and storage temperature range

T_J, T_STG

°C

Document Number: 88974

Revision: 19-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5

中文翻译

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与VF30120S-E3/4W相关器件

型号	品牌	获取价格	描述	数据表
VF30120SG	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
VF30120SG_10	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
VF30120SG_15	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
VF30120SG-E3/4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 5 A
VF30120SG-E3-4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
VF30120SG-M3-4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
VF30150C	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A
VF30150C_10	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VF30150C-E3/4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 5 A
VF30150C-E3-4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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