V30120S-E3, VF30120S-E3, VB30120S-E3, VI30120S-E3
www.vishay.com
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.43 V at IF = 5 A
FEATURES
TMBS®
• Trench MOS Schottky technology
TO-220AB
ITO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB
package)
3
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
3
2
2
1
1
V30120S
VF30120S
PIN 1
PIN 3
PIN 1
PIN 2
CASE
PIN 2
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PIN 3
TO-263AB
TO-262AA
TYPICAL APPLICATIONS
K
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
K
A
MECHANICAL DATA
3
NC
VB30120S
2
Case:
TO-220AB,
ITO-220AB,
TO-263AB
and
1
VI30120S
TO-262AA
PIN 1
PIN 3
NC
A
K
PIN 2
K
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
HEATSINK
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
PRIMARY CHARACTERISTICS
IF(AV)
30 A
120 V
300 A
0.74 V
150 °C
Polarity: As marked
VRRM
Mounting Torque: 10 in-lbs maximum
IFSM
VF at IF = 30 A
TJ max.
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Package
Diode variation
Single die
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V30120S VF30120S VB30120S VI30120S UNIT
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
VRRM
IF(AV)
120
30
V
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
300
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 100 mH
Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C 2 °C
Voltage rate of change (rated VR)
EAS
IRRM
180
0.5
mJ
A
dV/dt
VAC
10 000
1500
V/μs
V
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Operating junction and storage temperature range
TJ, TSTG
-40 to +150
°C
Revision: 05-Nov-13
Document Number: 88974
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000