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VF30100C-M3/4W

更新时间： 2024-09-20 21:11:27
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
6页 169K
描述
Rectifier Diode,

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中文翻译

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VF30100C-M3/4W 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：unknownFactory Lead Time：13 weeks
风险等级：5.68二极管类型：RECTIFIER DIODE
峰值回流温度（摄氏度）：NOT SPECIFIED处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

VF30100C-M3/4W 数据手册

 浏览型号VF30100C-M3/4W的Datasheet PDF文件第2页浏览型号VF30100C-M3/4W的Datasheet PDF文件第3页浏览型号VF30100C-M3/4W的Datasheet PDF文件第4页浏览型号VF30100C-M3/4W的Datasheet PDF文件第5页浏览型号VF30100C-M3/4W的Datasheet PDF文件第6页 
V30100C-E3, VF30100C-E3, VB30100C-E3, VI30100C-E3  
www.vishay.com  
Vishay General Semiconductor  
Dual High Voltage Trench MOS Barrier Schottky Rectifier  
Ultra Low VF = 0.455 V at IF = 5 A  
FEATURES  
TMBS®  
• Trench MOS Schottky technology  
TO-220AB  
ITO-220AB  
• Low forward voltage drop, low power losses  
• High efficiency operation  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 245 °C (for TO-263AB  
package)  
• Low thermal resistance  
3
3
2
2
1
• Solder bath temperature 275 °C maximum, 10 s, per JESD  
22-B106 (for TO-220AB, ITO-220AB, and TO-262AA  
package)  
1
V30100C  
VF30100C  
PIN 1  
PIN 1  
PIN 2  
CASE  
PIN 2  
PIN 3  
PIN 3  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TO-263AB  
TO-262AA  
TYPICAL APPLICATIONS  
K
K
For use in high frequency converters, switching power  
supplies, freewheeling diodes, OR-ing diode, DC/DC  
converters, and reverse battery protection.  
2
MECHANICAL DATA  
3
1
2
1
Case: TO-220AB, ITO-220AB, TO-263AB, and TO-262AA  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
VB30100C  
VI30100C  
PIN 1  
PIN 2  
K
PIN 1  
PIN 2  
K
HEATSINK  
PIN 3  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
PRIMARY CHARACTERISTICS  
Polarity: As marked  
IF(AV)  
2 x 15 A  
Mounting Torque: 10 in-lbs maximum  
VRRM  
100 V  
IFSM  
160 A  
VF at IF = 15 A  
TJ max.  
0.63 V  
150 °C  
Package  
Diode variation  
TO-220AB, ITO-220AB, TO-263AB, TO-262AA  
Common cathode  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL V30100C VF30100C VB30100C VI30100C UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
100  
30  
V
per device  
per diode  
Maximum average forward rectified current (fig. 1)  
IF(AV)  
A
15  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
EAS  
160  
210  
1.0  
A
mJ  
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode  
Peak repetitive reverse current at tp = 2 μs, 1 kHz,  
TJ = 38 °C 2 °C per diode  
IRRM  
Voltage rate of change (rated VR)  
dV/dt  
VAC  
10 000  
1500  
V/μs  
V
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min  
Operating junction and storage temperature range  
TJ, TSTG  
-40 to +150  
°C  
Revision: 13-Dec-16  
Document Number: 89010  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
123456

中文翻译

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