Datasheet > VF30100S_15

VF30100S_15

更新时间： 2024-09-21 01:26:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	78K
描述
High-Voltage Trench MOS Barrier Schottky Rectifier

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数据手册

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VF30100S_15 数据手册

VF30100S

Vishay General Semiconductor

www.vishay.com

High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.39 V at I_F= 5 A

FEATURES

TMBS^®

ITO-220AB

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters and reverse battery protection.

VF30100S

PIN 1

PIN 3

PIN 2

MECHANICAL DATA

Case: ITO-220AB

Molding compound meets UL 94 V-0 flammability rating

PRIMARY CHARACTERISTICS

I_F(AV)

30 A

100 V

Base P/N-M3

- halogen-free, RoHS-compliant, and

commercial grade

V_RRM

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

I_FSM

250 A

V_Fat I_F= 30 A

T_Jmax.

Package

0.69 V

150 °C

ITO-220AB

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

Diode variation

Single diode



MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VF30100S

100

UNIT

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

V_RRM

I_F(AV)

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

I_FSM

250

Isolation voltage from terminal to heat sink t = 1 min

Operating junction and storage temperature range

V_AC

1500

T_J, T_STG

-40 to +150

°C

Revision: 09-Nov-15

Document Number: 89195

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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VF30100S-E3/45	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A
VF30100S-E3/4W	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier
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VF30100SG	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A
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VF30120S	VISHAY	获取价格	High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A