Datasheet > UPA2826T1S

UPA2826T1S

更新时间： 2024-11-06 12:47:15

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
7页	217K
描述
N-channel MOSFET 20 V, 27 A, 4.3 mA

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UPA2826T1S 数据手册

Data Sheet

μPA2826T1S

N-channel MOSFET

20 V , 27 A , 4.3 mΩ

R07DS0989EJ0100

Rev.1.00

Dec 25, 2012

Description

The μ PA2826T1S is N-channel MOS Field Effect Transistor designed for power management applications of portable

equipment .

Features

•

V_DSS= 20 V (T_A= 25°C)

Low on-state resistance

⎯ R_DS(on)= 4.3 mΩ MAX. (V_GS= 8.0 V, I_D= 13.5 A)

2.5 V Gate-drive available

Small & thin type surface mount package with heat spreader

Pb-free and Halogen free

•

HWSON-8

Ordering Information

Part No.

LEAD PLATING

PACKING

Package

HWSON-8

μ PA2826T1S-E2-AT^∗

Pure Sn(Tin)

Tape 5000 p/reel

0.022 g TYP.

Note: ^∗1. Pb-free (This product does not contain Pb in external electrode and other parts.)

Absolute Maximum Ratings (T_A= 25°C)

Item

Symbol

Ratings

Unit

Drain to Source Voltage (V_GS= 0 V)

Gate to Source Voltage (V_DS= 0 V)

Drain Current (DC) (T_C= 25°C)

V_DSS

V_GSS

I_D(DC)

±12

±27

Drain Current (pulse) ^∗

I_D(pulse)

P_T1

±81

Total Power Dissipation ^∗

1.5

°C

Total Power Dissipation (PW = 10 sec) ^∗

Total Power Dissipation (T_C= 25°C)

Channel Temperature

P_T2

3.8

P_T3

T_ch

150

Storage Temperature

T_stg

−55 to +150

Thermal Resistance

Channel to Ambient Thermal Resistance ^∗2

R_th(ch-A)

R_th(ch-C)

83.3

6.25

°C/W

Channel to Case(Drain) Thermal Resistance

Notes: ^∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%

^∗2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt

R07DS0989EJ0100 Rev.1.00

Dec 25, 2012

Page 1 of 6

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