是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | SC-95 |
包装说明: | SMALL OUTLINE, R-PDSO-G5 | 针数: | 5 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.29 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (Abs) (ID): | 2 A |
最大漏极电流 (ID): | 2 A | 最大漏源导通电阻: | 0.18 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G5 |
JESD-609代码: | e6 | 元件数量: | 1 |
端子数量: | 5 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 125 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 0.57 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | TIN BISMUTH | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA507TE-T2-AT | RENESAS |
获取价格 |
2000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, SC-95, MINI MOLD PACKAGE-5 | |
UPA508TE | NEC |
获取价格 |
N-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING | |
UPA508TE-A | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-o | |
UPA508TE-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,2A I(D),TSOP | |
UPA508TE-T1-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,2A I(D),TSOP | |
UPA508TE-T2 | RENESAS |
获取价格 |
UPA508TE-T2 | |
UPA508TE-T2-A | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,2A I(D),TSOP | |
UPA508TE-T2-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,2A I(D),TSOP | |
UPA509TA | RENESAS |
获取价格 |
50mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, SC-74A, 5 PIN | |
UPA509TA-UV | RENESAS |
获取价格 |
SMALL SIGNAL, FET |