是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SC-95 | 包装说明: | SMALL OUTLINE, R-PDSO-G5 |
针数: | 6 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.38 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (ID): | 2 A |
最大漏源导通电阻: | 0.09 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G5 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 5 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA508TE-A | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-o | |
UPA508TE-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,2A I(D),TSOP | |
UPA508TE-T1-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,2A I(D),TSOP | |
UPA508TE-T2 | RENESAS |
获取价格 |
UPA508TE-T2 | |
UPA508TE-T2-A | RENESAS |
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TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,2A I(D),TSOP | |
UPA508TE-T2-AT | RENESAS |
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TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,2A I(D),TSOP | |
UPA509TA | RENESAS |
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50mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, SC-74A, 5 PIN | |
UPA509TA-UV | RENESAS |
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SMALL SIGNAL, FET | |
UPA509TA-UW | RENESAS |
获取价格 |
SMALL SIGNAL, FET | |
UPA53C | ETC |
获取价格 |
NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR ARRAY |