Datasheet > UPA573CT-T1-AT

UPA573CT-T1-AT

更新时间： 2024-11-10 01:14:39

品牌	Logo	应用领域
瑞萨 - RENESAS		开关
页数	文件大小	规格书
8页	198K
描述
P-CHANNEL MOSFET FOR SWITCHING

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技术参数
数据手册

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UPA573CT-T1-AT 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
零件包装代码：	SSP	包装说明：	,
针数：	5	Reach Compliance Code：	compliant
风险等级：	5.72	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

UPA573CT-T1-AT 数据手册

Preliminary Data Sheet

µPA573CT

P-CHANNEL MOSFET FOR SWITCHING

R07DS1280EJ0200

Rev.2.00

Jul 08, 2015

Description

The µPA573CT, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven

directly by a 4.5 V power source.

Features

 Two MOSFET circuits (Two source common)

 Directly driven by a 4.5 V power source.

 Low on-state resistance

R^DS(on)1= 2.7  MAX. (VGS = -10 V, ID = -100 mA)

R^DS(on)2= 3.2  MAX. (VGS = -4.5 V, ID = -50 mA)

Ordering Information

Part Number

Lead Plating

Packing

Package

µPA573CT-T1-A/AT

-A : Sn-Bi , -AT : Pure Sn

3000p/Reel

SC-88A (5pSSP)

Remark "-A/AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts.

Marking UH

Absolute Maximum Ratings (T^A= 25°C)

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (VDS = 0 V)

Drain Current (DC)

VDSS

VGSS

ID(DC)

ID(pulse)

-60

∓20

∓100

C

Drain Current (pulse) ^Note

∓200

Total Power Dissipation

200 (Total)

150

Channel Temperature

Tch

Storage Temperature

Tstg

55 to 150

C

Note PW  10 s, Duty Cycle  1%

R07DS1280EJ0200 Rev.2.00

Jul 08, 2015

Page 1 of 6

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