是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
最大漏极电流 (Abs) (ID): | 0.1 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 0.3 W |
子类别: | Other Transistors | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA610 | ETC |
获取价格 |
UPA610TA Data Sheet | Data Sheet[09/1996] | |
UPA610TA | NEC |
获取价格 |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING | |
UPA610TA | RENESAS |
获取价格 |
100mA, 30V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, PACKAGE-6 | |
UPA610TA(0)-T1-AT | RENESAS |
获取价格 |
P-Channel Mos Field Effect Transistor For High Speed Switching, MM, /Embossed Tape | |
UPA610TA-A | NEC |
获取价格 |
Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 2-Element, P-Channel, Silicon, Metal | |
UPA610TA-AT | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,30V V(BR)DSS,100MA I(D),TSOP | |
UPA610TA-T1-A | RENESAS |
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P-Channel Mos Field Effect Transistor For High Speed Switching, MM, /Embossed Tape | |
UPA610TA-T2-A | RENESAS |
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TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,30V V(BR)DSS,100MA I(D),TSOP | |
UPA611 | ETC |
获取价格 |
UPA611TA Data Sheet | Data Sheet[08/1999] | |
UPA6118C | NEC |
获取价格 |
Power Bipolar Transistor, 0.04A I(C), 85V V(BR)CEO, 8-Element, NPN, Silicon, Plastic/Epoxy |