UPA620TT-A

更新时间： 2024-10-14 13:15:11

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管场效应晶体管光电二极管
页数	文件大小	规格书
8页	69K
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中文翻译

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数据手册

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UPA620TT-A 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µPA620TT

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The µPA620TT is a switching device which can be driven directly by a

2.5 V power source.

2.0±0.2

This device features a low on-state resistance and excellent switching

characteristics, and is suitable for applications such as power switch of

portable machine and so on.

0~0.05

FEATURES

• 2.5 V drive available

• Low on-state resistance

0.65

R^DS(on)1= 38 mΩ MAX. (V^GS= 4.5 V, I^D= 2.5 A)

R^DS(on)2= 39 mΩ MAX. (V^GS= 4.0 V, I^D= 2.5 A)

R^DS(on)3= 54 mΩ MAX. (V^GS= 2.5 V, I^D= 2.5 A)

MAX. 0.8

0.05

ORDERING INFORMATION

PART NUMBER

PACKAGE

1,2,5,6: Drain

: Gate

: Source

µPA620TT

6 pin WSOF (1620)

Marking: WA

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^A= 25°C)

Drain Current (pulse) ^Note1

Total Power Dissipation

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T1

+0.1

0.2

−0.05

0.1

±12

±5.0

±20

0.2

EQUIVALENT CIRCUIT

°C

Drain

Total Power Dissipation ^Note2

P^T2

1.5

Channel Temperature

Tch

150

Body

Diode

Storage Temperature

Tstg

–55 to +150 °C

Gate

Protection

Diode

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on FR-4 board of 5000 mm²x 1.1 mm, t ≤ 5 sec.

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. G16111EJ1V0DS00 (1st edition)

Date Published September 2002 NS CP(K)

Printed in Japan

2002

12 3 4 5 6 7 8

中文翻译

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