Datasheet > UPA650

UPA650

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UPA650TT Data Sheet \| Data Sheet[05/2002]

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中文翻译

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UPA650 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µPA650TT

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The µPA650TT is a switching device, which can be driven directly by a

1.8 V power source.

2.0±0.2

This device features a low on-state resistance and excellent switching

characteristics, and is suitable for applications such as power switch of

portable machine and so on.

0~0.05

FEATURES

•

1.8 V drive available

Low on-state resistance

0.65

R^DS(on)1= 50 mΩ MAX. (V^GS= −4.5 V, I^D= −2.5 A)

R^DS(on)2= 68 mΩ MAX. (V^GS= −2.5 V, I^D= −2.5 A)

R^DS(on)3= 114 mΩ MAX. (V^GS= −1.8 V, I^D= −1.5 A)

MAX. 0.8

ORDERING INFORMATION

0.05

PART NUMBER

PACKAGE

µPA650TT

6pinWSOF (1620)

1,2,5,6 : Drain

: Gate

: Source

Marking: WD

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^A= 25°C)

Drain Current (pulse) ^Note1

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T1

−12

m8.0

+0.1

0.2

−0.05

0.1

m5.0

m20

EQUIVALENT CIRCUIT

Total Power Dissipation (T^A= 25°C)

Total Power Dissipation (T^A= 25°C) ^Note2

Channel Temperature

0.2

°C

Drain

P^T2

1.4

T^ch

150

Body

Diode

Storage Temperature

T^stg

−55 to +150

Gate

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on FR-4 board, t ≤ 5 sec.

Gate

Protection

Diode

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this

device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage

may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published May 2002 NS CP(K)

Printed in Japan

G16202EJ1V0DS00 (1st edition)

2002

12 3 4 5 6 7 8

中文翻译

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UPA651	ETC	获取价格	UPA651TT Data Sheet \| Data Sheet[05/2002]
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