Datasheet > UPA652

UPA652

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UPA652TT Data Sheet \| Data Sheet[09/2002]

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UPA652 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µPA652TT

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The µPA652TT is a switching device, which can be driven directly by a

2.5 V power source.

2.0±0.2

This device features a low on-state resistance and excellent switching

characteristics, and is suitable for applications such as power switch of

portable machine and so on.

0~0.05

FEATURES

•

2.5 V drive available

Low on-state resistance

0.65

R^DS(on)1= 294 mΩ MAX. (V^GS= −4.5 V, I^D= −1.0 A)

R^DS(on)2= 336 mΩ MAX. (V^GS= −4.0 V, I^D= −1.0 A)

R^DS(on)3= 514 mΩ MAX. (V^GS= −2.5 V, I^D= −0.5 A)

MAX. 0.8

ORDERING INFORMATION

0.05

PART NUMBER

PACKAGE

µPA652TT

6pinWSOF (1620)

1,2,5,6 : Drain

: Gate

: Source

Marking: WF

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC)

V^DSS

V^GSS

ID(DC)

I^D(pulse)

PT1

−20

m12

+0.1

0.2

−0.05

0.1

m2.0

Drain Current (pulse) ^Note1

m8.0

EQUIVALENT CIRCUIT

Total Power Dissipation

0.2

°C

Total Power Dissipation ^Note2

Channel Temperature

Drain

P^T2

1.3

T^ch

150

Body

Diode

Storage Temperature

T^stg

−55 to +150

Gate

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

Gate

2. Mounted on FR-4 board of 5000 mm²x 1.1 mm, t ≤ 5 sec.

Protection

Diode

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this

device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage

may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

G16204EJ1V0DS00 (1st edition)

Date Published September 2002 NS CP(K)

Printed in Japan

2002

12 3 4 5 6 7 8

中文翻译

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与UPA652相关器件

型号	品牌	获取价格	描述	数据表
UPA652TT	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA652TT-A	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,2A I(D),SOT-363VAR
UPA652TT-E1	RENESAS	获取价格	UPA652TT-E1
UPA652TT-E1-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,2A I(D),SOT-363VAR
UPA652TT-E2	RENESAS	获取价格	UPA652TT-E2
UPA652TT-E2-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,2A I(D),SOT-363VAR
UPA653	ETC	获取价格	UPA653TT Data Sheet \| Data Sheet[09/2002]
UPA653TT	NEC	获取价格	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
UPA654TT-E1-A	NEC	获取价格	Small Signal Field-Effect Transistor, 2.5A I(D), 12V, 1-Element, P-Channel, Silicon, Metal
UPA654TT-E2-A	NEC	获取价格	Small Signal Field-Effect Transistor, 2.5A I(D), 12V, 1-Element, P-Channel, Silicon, Metal