Datasheet > UPA3753GR-E2-AT

UPA3753GR-E2-AT

更新时间： 2024-11-06 12:16:59

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
8页	142K
描述
MOS FIELD EFFECT TRANSISTOR

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UPA3753GR-E2-AT 数据手册

Data Sheet

μPA3753GR

MOS FIELD EFFECT TRANSISTOR

R07DS0758EJ0100

Rev.1.00

May 25, 2012

Description

The μPA3753GR is Dual N-channel MOS Field Effect Transistors designed for switching application.

Features

•

Dual chip type

Low on-state resistance

⎯ R_DS(on)= 56 mΩ MAX. (V_GS= 10 V, I_D= 2.5 A)

⎯ R_DS(on)= 72 mΩ MAX. (V_GS= 4.5 V, I_D= 2.5 A)

Low gate charge

⎯ Q_G= 13.4 nC TYP. (V_GS= 10 V)

Small and surface mount package (Power SOP8)

•

Ordering Information

Part No.

μPA3753GR-E1-AT ^*1

μPA3753GR-E2-AT ^*1

Lead Plating

Packing

Package

Pure Sn (Tin)

Tape 2500 p/reel

Power SOP8

0.08 g TYP.

Note: *1. Pb-Free (This product does not contain Pb in the external electrode and other parts.)

“-E1”,”-E2” indicates the unit orientation.

Absolute Maximum Ratings (T_A= 25°C)

Item

Symbol

Ratings

Unit

Drain to Source Voltage (V_GS= 0 V)

Gate to Source Voltage (V_DS= 0 V)

Drain Current (DC)

V_DSS

V_GSS

I_D(DC)

±20

±5.0

Drain Current (pulse) ^*1

I_D(pulse)

P_T1

±20

Total Power Dissipation (1unit) ^*2

Total Power Dissipation (2units) ^*2

Channel Temperature

0.85

°C

P_T2

1.12

T_ch

150

Storage Temperature

T_STG

I_AS

−55 to +150

5.0

Single Avalanche Current ^*3

Single Avalanche Energy ^*3

E_AS

2.5

Notes: *1. PW ≤ 10 μs, Duty Cycle ≤ 1%

*2. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt

*3. Starting T_ch= 25°C, V_DD= 30 V, R_G= 25 Ω, V_GS= 20 → 0 V, L = 100 μH

R07DS0758EJ0100 Rev.1.00

May 25, 2012

Page 1 of 6

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