UPA505T

更新时间： 2024-11-05 22:38:51

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
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描述
N-CHANNEL/P-CHANNEL MOS FET 5-PIN 2 CIRCUITS

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UPA505T 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µPA505T

N-CHANNEL/P-CHANNEL MOS FET (5-PIN 2 CIRCUITS)

The µPA505T is a mini-mold device provided with two

MOS FET circuits. It achieves high-density mounting and

saves mounting costs.

PACKAGE DIMENSIONS (in millimeters)

+0.1

0.32

–0.05

0.16

–0.06

FEATURES

•

Two source common MOS FET circuits in package the

same size as SC-59

0 to 0.1

•

Complementary MOS FETs are provided in one package.

Automatic mounting supported

0.8

0.95 0.95

1.1 to 1.4

1.9

2.9 ±0.2

PIN CONNECTION (Top View)

Marking: FA

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

PARAMETER

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

SYMBOL

VDSS

VGSS

ID(DC)

ID(pulse)*

RATINGS

UNIT

50/–50

–

±20/+16

–

±100/+100

˚C

–

Drain Current (pulse)

Total Power Dissipation

Channel Temperature

Storage Temperature

±200/+200

300 (TOTAL)

150

Tch

Tstg

–55 to +150

˚C

* PW ≤ 10 ms, Duty Cycle ≤ 50 %

Note The left and right values in the ratings column are correspond to N-ch and P-ch FETs, respectively.

Document No. G11241EJ1V0DS00 (1st edition)

Date Published June 1996 P

Printed in Japan

1996

12 3 4 5 6 7...9

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