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UPA507TE-T2-A PDF预览

UPA507TE-T2-A

更新时间: 2024-09-16 15:56:03
品牌 Logo 应用领域
日电电子 - NEC ISM频段开关光电二极管晶体管
页数 文件大小 规格书
8页 153K
描述
Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SC-95, MINI MOLD PACKAGE-5

UPA507TE-T2-A 技术参数

是否Rohs认证:符合生命周期:Transferred
包装说明:LEAD FREE, SC-95, MINI MOLD PACKAGE-5Reach Compliance Code:compliant
风险等级:5.67Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):2 A最大漏源导通电阻:0.18 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G5
JESD-609代码:e6元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:TIN BISMUTH
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

UPA507TE-T2-A 数据手册

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DATA SHEET  
MOS FET WITH SCHOTTμKYPBAARR5IE0R7DTIODEE  
P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE  
FOR SWITCHING  
PACKAGE DRAWING (Unit: mm)  
DESCRIPTION  
+0.1  
–0.05  
The μ PA507TE is a switching device, which can be driven directly  
by a 1.8 V power source.  
+0.1  
–0.06  
0.32  
0.16  
This device incorporates a MOS FET, which features a low on-state  
resistance and excellent switching characteristics and a low forward  
voltage Schottky barrier diode, and is suitable for applications such  
as DC/DC converter of portable machine and so on.  
5
1
4
3
0 to 0.1  
2
0.65  
0.95 0.95  
1.9  
FEATURES  
0.9 to 1.1  
2.9 ±0.2  
1.8 V drive available (MOS FET)  
Low on-state resistance (MOS FET)  
RDS(on)1 = 68 mΩ TYP. (VGS = 4.5 V, ID = 1.0 A)  
RDS(on)2 = 84 mΩ TYP. (VGS = 2.5 V, ID = 1.0 A)  
RDS(on)3 = 109 mΩ TYP. (VGS = 1.8 V, ID = 1.0 A)  
Low forward voltage (Schottky barrier diode)  
VF = 0.35 V TYP. (IF = 1.0 A)  
PIN CONNECTION (Top View)  
5
4
1: Gate  
2: Source  
3: Anode  
4: Cathode  
5: Drain  
1
2
3
<R>  
ORDERING INFORMATION  
PART NUMBER  
LEAD PLATING  
PACKING  
PACKAGE  
Note  
μ PA507TE-T1-A  
Sn-Bi  
8 mm Embossed Taping 3000 p/reel  
8 mm Embossed Taping 3000 p/reel  
SC-95_5pin (Mini Mold Thin Type)  
SC-95_5pin (Mini Mold Thin Type)  
μ PA507TE-T2-A Note  
μ PA507TE-T1-AT Note  
μ PA507TE-T2-AT Note  
Pure Sn  
Note Pb-free (This product does not contain Pb in the external electrode and other parts).  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage exceeding  
the rated voltage may be applied to this device.  
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with  
caution for electrostatic discharge.  
VESD 100 V TYP. (C = 200 pF, R = 0 Ω, Single pulse)  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. G16626EJ2V0DS00 (2nd edition)  
Date Published December 2006 NS CP(K)  
Printed in Japan  
2003  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  

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