UPA507TE-A

更新时间： 2024-09-16 13:15:11

品牌	Logo	应用领域
日电电子 - NEC		肖特基二极管开关
页数	文件大小	规格书
8页	146K
描述
Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MINIMOLD, SC-95, 6 PIN

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中文翻译

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技术参数
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UPA507TE-A 技术参数

生命周期：	Transferred	零件包装代码：	SC-95
包装说明：	SMALL OUTLINE, R-PDSO-G5	针数：	6
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.29	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V	最大漏极电流 (ID)：	2 A
最大漏源导通电阻：	0.18 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G5	JESD-609代码：	e6
元件数量：	1	端子数量：	5
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	P-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN BISMUTH	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

UPA507TE-A 数据手册

DATA SHEET

MOS FET WITH SCHOTTKY BARRIER DIODE

µ PA507TE

P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE

FOR SWITCHING

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

The µ PA507TE is a switching device, which can be driven

directly by a 1.8 V power source.

+0.1

–0.06

0.32

–0.05

0.16

This device incorporates a MOS FET, which features a low

on-state resistance and excellent switching characteristics and

a low forward voltage Schottky barrier diode, and is suitable

for applications such as DC/DC converter of portable machine

and so on.

0 to 0.1

FEATURES

0.65

• 1.8 V drive available (MOS FET)

0.95 0.95

1.9

• Low on-state resistance (MOS FET)

R^DS(on)1= 68 mΩ TYP. (VGS = −4.5 V, ID = −1.0 A)

R^DS(on)2= 84 mΩ TYP. (VGS = −2.5 V, ID = −1.0 A)

R^DS(on)3= 109 mΩ TYP. (VGS = −1.8 V, ID = −1.0 A)

• Low forward voltage (Schottky barrier diode)

V^F= 0.35 V TYP. (IF = 1.0 A)

0.9 to 1.1

2.9 ±0.2

★

PIN CONNECTION (Top View)

ORDERING INFORMATION

PART NUMBER

PACKAGE

1: Gate

µ PA507TE

SC-95_5p (Mini Mold Thin Type)

2: Source

3: Anode

4: Cathode

5: Drain

Marking: ZA

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with

caution for electrostatic discharge.

V^ESD100 V TYP. (C = 200 pF, R = 0 Ω, Single pulse)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G16626EJ1V1DS00 (1st edition)

The mark ★ shows major revised points.

Date Published December 2003 NS CP(K)

2003

Printed in Japan

12 3 4 5 6 7 8

中文翻译

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与UPA507TE-A相关器件

型号	品牌	获取价格	描述	数据表
UPA507TE-T1	RENESAS	获取价格	UPA507TE-T1
UPA507TE-T1-A	NEC	获取价格	Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-o
UPA507TE-T1-AT	NEC	获取价格	Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-o
UPA507TE-T2	RENESAS	获取价格	UPA507TE-T2
UPA507TE-T2-A	NEC	获取价格	Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-o
UPA507TE-T2-A	RENESAS	获取价格	2000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, SC-95, MINI MOLD PACKAGE-5
UPA507TE-T2-AT	RENESAS	获取价格	2000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, SC-95, MINI MOLD PACKAGE-5
UPA508TE	NEC	获取价格	N-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING
UPA508TE-A	NEC	获取价格	Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-o
UPA508TE-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,2A I(D),TSOP

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