UPA507TE

更新时间： 2024-11-05 22:49:27

品牌	Logo	应用领域
日电电子 - NEC		肖特基二极管开关
页数	文件大小	规格书
8页	146K
描述
P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING

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中文翻译

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技术参数
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UPA507TE 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	SC-95	包装说明：	SMALL OUTLINE, R-PDSO-G5
针数：	6	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.46
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	20 V
最大漏极电流 (ID)：	2 A	最大漏源导通电阻：	0.18 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PDSO-G5
JESD-609代码：	e0	元件数量：	1
端子数量：	5	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	P-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	TIN LEAD
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON

UPA507TE 数据手册

DATA SHEET

MOS FET WITH SCHOTTKY BARRIER DIODE

µ PA507TE

P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE

FOR SWITCHING

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

The µ PA507TE is a switching device, which can be driven

directly by a 1.8 V power source.

+0.1

–0.06

0.32

–0.05

0.16

This device incorporates a MOS FET, which features a low

on-state resistance and excellent switching characteristics and

a low forward voltage Schottky barrier diode, and is suitable

for applications such as DC/DC converter of portable machine

and so on.

0 to 0.1

FEATURES

0.65

• 1.8 V drive available (MOS FET)

0.95 0.95

1.9

• Low on-state resistance (MOS FET)

R^DS(on)1= 68 mΩ TYP. (VGS = −4.5 V, ID = −1.0 A)

R^DS(on)2= 84 mΩ TYP. (VGS = −2.5 V, ID = −1.0 A)

R^DS(on)3= 109 mΩ TYP. (VGS = −1.8 V, ID = −1.0 A)

• Low forward voltage (Schottky barrier diode)

V^F= 0.35 V TYP. (IF = 1.0 A)

0.9 to 1.1

2.9 ±0.2

★

PIN CONNECTION (Top View)

ORDERING INFORMATION

PART NUMBER

PACKAGE

1: Gate

µ PA507TE

SC-95_5p (Mini Mold Thin Type)

2: Source

3: Anode

4: Cathode

5: Drain

Marking: ZA

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with

caution for electrostatic discharge.

V^ESD100 V TYP. (C = 200 pF, R = 0 Ω, Single pulse)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G16626EJ1V1DS00 (1st edition)

The mark ★ shows major revised points.

Date Published December 2003 NS CP(K)

2003

Printed in Japan

12 3 4 5 6 7 8

中文翻译

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与UPA507TE相关器件

型号	品牌	获取价格	描述	数据表
UPA507TE-A	NEC	获取价格	Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-o
UPA507TE-T1	RENESAS	获取价格	UPA507TE-T1
UPA507TE-T1-A	NEC	获取价格	Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-o
UPA507TE-T1-AT	NEC	获取价格	Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-o
UPA507TE-T2	RENESAS	获取价格	UPA507TE-T2
UPA507TE-T2-A	NEC	获取价格	Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-o
UPA507TE-T2-A	RENESAS	获取价格	2000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, SC-95, MINI MOLD PACKAGE-5
UPA507TE-T2-AT	RENESAS	获取价格	2000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, SC-95, MINI MOLD PACKAGE-5
UPA508TE	NEC	获取价格	N-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING
UPA508TE-A	NEC	获取价格	Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-o

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