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UPA503CT-T1-AT PDF预览

UPA503CT-T1-AT

更新时间: 2024-11-10 01:14:39
品牌 Logo 应用领域
瑞萨 - RENESAS 开关
页数 文件大小 规格书
8页 197K
描述
P-CHANNEL MOSFET FOR SWITCHING

UPA503CT-T1-AT 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
零件包装代码:MM包装说明:,
针数:5Reach Compliance Code:compliant
风险等级:5.72峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

UPA503CT-T1-AT 数据手册

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Preliminary Data Sheet  
µPA503CT  
P-CHANNEL MOSFET FOR SWITCHING  
R07DS1279EJ0200  
Rev.2.00  
Jul 08, 2015  
Description  
The µPA503CT, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven  
directly by a 4.5 V power source.  
Features  
Two MOSFET circuits (Two source common)  
Directly driven by a 4.5 V power source.  
Low on-state resistance  
RDS(on)1 = 2.7 MAX. (VGS = -10 V, ID = -100 mA)  
RDS(on)2 = 3.2 MAX. (VGS = -4.5 V, ID = -50 mA)  
Ordering Information  
Part Number  
Lead Plating  
Packing  
Package  
µPA503CT-T1-A/AT  
-A:Sn-Bi, -AT:Pure Sn  
3000p/Reel  
SC-74A (5pMM)  
Remark "-A/AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts.  
Marking UF  
Absolute Maximum Ratings (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC)  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT  
-60  
20  
V
V
100  
mA  
mA  
mW  
C  
Drain Current (pulse) Note  
200  
Total Power Dissipation  
300 (Total)  
150  
Channel Temperature  
Tch  
Storage Temperature  
Tstg  
55 to 150  
C  
Note PW 10 s, Duty Cycle 1%  
R07DS1279EJ0200 Rev.2.00  
Jul 08, 2015  
Page 1 of 6  

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