Datasheet > UNRF1A5

UNRF1A5

更新时间： 2024-11-25 23:39:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	81K
描述
Composite Device - Transistors with built-in Resistor

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UNRF1A5 数据手册

Transistors with built-in Resistor

UNRF1A5

Silicon PNP epitaxial planar transistor

Unit: mm

For digital circuits

■ Features

• Suitable for high-density mounting and downsizing of the equip-

ment for Ultraminiature leadless package

0.6 mm × 1.0 mm (height 0.39 mm)

+0.01

0.39

1.00 0.0ꢀ

−0.03

0.2ꢀ 0.0ꢀ

■ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

−50

Unit

0.6ꢀ 0.01

0.0ꢀ 0.03

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

−50

1: Base

Collector current

I_C

P_T

T_j

−80

°C

2: Emitter

3: Collector

ML3-N2 Package

Total power dissipation

Junction temperature

Storage temperature

100

125

Marking Symbol: 2X

Internal Connection

T_stg

−55 to +125

°C

R₁(10 kΩ)

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

I_CBO

Conditions

Min

−50

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Collector-emitter saturation voltage

Output voltage high level

I_C= −10 µA, I_E= 0

I_C= −2 mA, I_B= 0

V_CB= −50 V, I_E= 0

V_CE= −50 V, I_B= 0

V_EB= −6 V, I_C= 0

V_CE= −10 V, I_C= −5 mA

− 0.1

− 0.5

− 0.01

460

µA



I_CEO

I_EBO

h_FE

160

−4.9

V_CE(sat)I_C= −10 mA, I_B= − 0.3 mA

− 0.25

V_OH

V_OL

R₁

V_CC= −5 V, V_B= − 0.5 V, R_L= 1 kΩ

Output voltage low level

V_CC= −5 V, V_B= −2.5 V, R_L= 1 kΩ

− 0.2

Input resistance

−30%

+30%

kΩ

MHz

Transition frequency

f_T

V_CB= −10 V, I_E= 1 mA, f = 200 MHz

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: December 2002

SJH00069AED

12 3

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