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UNRF2AN PDF预览

UNRF2AN

更新时间: 2024-11-25 22:41:43
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管开关
页数 文件大小 规格书
4页 84K
描述
Silicon NPN epitaxial planar transistor

UNRF2AN 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:CHIP CARRIER, R-XBCC-N3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.83Is Samacsys:N
其他特性:BUILT IN BIAS RESISTOR RATIO IS 10外壳连接:COLLECTOR
最大集电极电流 (IC):0.08 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):80
JESD-30 代码:R-XBCC-N3JESD-609代码:e6
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:Tin/Bismuth (Sn/Bi)端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

UNRF2AN 数据手册

 浏览型号UNRF2AN的Datasheet PDF文件第2页浏览型号UNRF2AN的Datasheet PDF文件第3页浏览型号UNRF2AN的Datasheet PDF文件第4页 
Transistors with built-in Resistor  
UNRF2AN  
Silicon NPN epitaxial planar transistor  
Unit: mm  
For digital circuits  
3
2
1
Features  
Suitable for high-density mounting and downsizing of the equip-  
ment for Ultraminiature leadless package  
0.6 mm × 1.0 mm (height 0.39 mm)  
+0.01  
0.39  
1.00 0.0ꢀ  
0.03  
0.2ꢀ 0.0ꢀ  
0.2ꢀ 0.0ꢀ  
1
Absolute Maximum Ratings Ta = 25°C  
2
3
Parameter  
Symbol  
Rating  
Unit  
V
0.6ꢀ 0.01  
0.0ꢀ 0.03  
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
50  
50  
V
1: Base  
Collector current  
IC  
PT  
Tj  
80  
mA  
mW  
°C  
2: Emitter  
3: Collector  
ML3-N2 Package  
Total power dissipation  
Junction temperature  
Storage temperature  
100  
125  
Marking Symbol: 2C  
Internal Connection  
Tstg  
55 to +125  
°C  
R1 (4.7 kΩ)  
B
C
E
R2  
(47 kΩ)  
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
VCBO  
VCEO  
ICBO  
Conditions  
Min  
50  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Output voltage high level  
IC = 10 µA, IE = 0  
IC = 2 mA, IB = 0  
VCB = 50 V, IE = 0  
VCE = 50 V, IB = 0  
VEB = 6 V, IC = 0  
VCE = 10 V, IC = 5 mA  
50  
V
0.1  
0.5  
µA  
µA  
mA  
ICEO  
IEBO  
0.2  
hFE  
80  
4.9  
400  
0.25  
VCE(sat) IC = 10 mA, IB = 0.3 mA  
V
VOH  
VOL  
R1  
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ  
V
Output voltage low level  
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ  
0.2  
V
Input resistance  
30%  
4.7  
0.1  
150  
+30%  
kΩ  
Resistance ratio  
R1 / R2  
fT  
Transition frequency  
VCB = 10 V, IE = −2 mA, f = 200 MHz  
MHz  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: March 2003  
SJH00082AED  
1

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