Transistors with built-in Resistor
UNRL110/111/113/114/115
Silicon PNP epitaxial planer type
Unit: mm
For digital circuit
0.020 0.010
3
2
1
I Features
Mold leadless type package, allowing downsizing and thinning of
the equipment and automatic insertion through the tape packing.
The PCB mounting area is 1/10 of that of lead type package (3-pin
MINI-type package).
•
4
0.60 0.0ꢀ
1.00 0.0ꢀ
•
4
3
1
I Resistance by Part Number
2
0.30 0.03
0.0ꢀ 0.03
Marking Symbol (R1)
(R2)
10 kΩ
47 kΩ
47 kΩ
0.60
• UNRL110
• UNRL111
• UNRL113
• UNRL114
• UNRL115
P
A
B
R
M
47 kΩ
10 kΩ
47 kΩ
10 kΩ
10 kΩ
1: Base
2: Emitter
3: Collector
4: Collector
ML4-N1 Package
I Absolute Maximum Ratings Ta = 25°C
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Symbol
VCBO
VCEO
IC
Rating
−50
Unit
V
Internal Connection
−50
V
3
4
2
R2
−100
mA
mW
°C
R1
Total power dissipation *
Junction temperature
Storage temperature
PT
150
1
Tj
125
Tstg
−55 to +125
°C
Note) : Printed circuit board copper foil for collector portion
*
area: 20.0 mm2 or more, thickness: 1.6 mm
I Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
ICBO
Conditions
Min
Typ
Max
− 0.1
− 0.5
− 0.5
− 0.2
− 0.1
− 0.01
Unit
Collector cutoff current
VCB = −50 V, IE = 0
VCE = −50 V, IB = 0
VEB = −6 V, IC = 0
µA
ICEO
Emitter cutoff UNRL111
IEBO
mA
current
UNRL114
UNRL113
UNRL110/115
Collector to base voltage
VCBO
VCEO
hFE
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
−50
−50
35
V
V
Collector to emitter voltage
Forward current UNRL111
transfer ratio
VCE = −10 V, IC = −5 mA
UNRL113/114
80
UNRL110/115
160
460
Collector to emitter saturation voltage
VCE(sat)
IC = −10 mA, IB = − 0.3 mA
− 0.25
V
Publication date: July 2001
SJH00044AED
1