5秒后页面跳转
UNRL111 PDF预览

UNRL111

更新时间: 2024-11-25 22:41:43
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
6页 120K
描述
Silicon PNP epitaxial planer type

UNRL111 数据手册

 浏览型号UNRL111的Datasheet PDF文件第2页浏览型号UNRL111的Datasheet PDF文件第3页浏览型号UNRL111的Datasheet PDF文件第4页浏览型号UNRL111的Datasheet PDF文件第5页浏览型号UNRL111的Datasheet PDF文件第6页 
Transistors with built-in Resistor  
UNRL110/111/113/114/115  
Silicon PNP epitaxial planer type  
Unit: mm  
For digital circuit  
0.020 0.010  
3
2
1
I Features  
Mold leadless type package, allowing downsizing and thinning of  
the equipment and automatic insertion through the tape packing.  
The PCB mounting area is 1/10 of that of lead type package (3-pin  
MINI-type package).  
4
0.60 0.0ꢀ  
1.00 0.0ꢀ  
4
3
1
I Resistance by Part Number  
2
0.30 0.03  
0.0ꢀ 0.03  
Marking Symbol (R1)  
(R2)  
10 kΩ  
47 kΩ  
47 kΩ  
0.60  
UNRL110  
UNRL111  
UNRL113  
UNRL114  
UNRL115  
P
A
B
R
M
47 kΩ  
10 kΩ  
47 kΩ  
10 kΩ  
10 kΩ  
1: Base  
2: Emitter  
3: Collector  
4: Collector  
ML4-N1 Package  
I Absolute Maximum Ratings Ta = 25°C  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
50  
Unit  
V
Internal Connection  
50  
V
3
4
2
R2  
100  
mA  
mW  
°C  
R1  
Total power dissipation *  
Junction temperature  
Storage temperature  
PT  
150  
1
Tj  
125  
Tstg  
55 to +125  
°C  
Note) : Printed circuit board copper foil for collector portion  
*
area: 20.0 mm2 or more, thickness: 1.6 mm  
I Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
ICBO  
Conditions  
Min  
Typ  
Max  
0.1  
0.5  
0.5  
0.2  
0.1  
0.01  
Unit  
Collector cutoff current  
VCB = −50 V, IE = 0  
VCE = −50 V, IB = 0  
VEB = −6 V, IC = 0  
µA  
ICEO  
Emitter cutoff UNRL111  
IEBO  
mA  
current  
UNRL114  
UNRL113  
UNRL110/115  
Collector to base voltage  
VCBO  
VCEO  
hFE  
IC = −10 µA, IE = 0  
IC = −2 mA, IB = 0  
50  
50  
35  
V
V
Collector to emitter voltage  
Forward current UNRL111  
transfer ratio  
VCE = −10 V, IC = −5 mA  
UNRL113/114  
80  
UNRL110/115  
160  
460  
Collector to emitter saturation voltage  
VCE(sat)  
IC = −10 mA, IB = − 0.3 mA  
0.25  
V
Publication date: July 2001  
SJH00044AED  
1

与UNRL111相关器件

型号 品牌 获取价格 描述 数据表
UNRL113 PANASONIC

获取价格

Silicon PNP epitaxial planer type
UNRL114 PANASONIC

获取价格

Silicon PNP epitaxial planer type
UNRL115 PANASONIC

获取价格

Silicon PNP epitaxial planer type
UNRL210 ETC

获取价格

Composite Device - Transistors with built-in Resistor
UNRL211 ETC

获取价格

複合デバイス - 抵抗内蔵型トランジスタ
UNRL213 ETC

获取价格

Composite Device - Transistors with built-in Resistor
UNRL214 ETC

获取价格

複合デバイス - 抵抗内蔵型トランジスタ
UNRL215 ETC

获取价格

複合デバイス - 抵抗内蔵型トランジスタ
UNRL216 ETC

获取价格

Composite Device - Transistors with built-in Resistor
UNS1K UNSEMI

获取价格

Surface Mount Transient Voltage Suppressors