Datasheet > UNRF2AM

UNRF2AM

更新时间： 2024-09-23 23:39:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
3页	81K
描述
Composite Device - Transistors with built-in Resistor

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中文翻译

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UNRF2AM 数据手册

Transistors with built-in Resistor

UNRF2AM

Silicon NPN epitaxial planar transistor

Unit: mm

For digital circuits

■ Features

• Suitable for high density package and downsizing of the equipment

for Ultraminiature leadless package

+0.01

0.39

1.00 0.0ꢀ

−0.03

0.6 mm × 1.0 mm (height 0.50 mm)

• Thickness: 0.4 mm (max.) package is achieved

0.2ꢀ 0.0ꢀ

■ Absolute Maximum Ratings T_a= 25°C

0.6ꢀ 0.01

0.0ꢀ 0.03

Parameter

Symbol

V_CBO

V_CEO

I_C

Rating

Unit

Rating

Collector to base voltage

Collector to emitter voltage

1: Base

2: Emitter

3: Collector

element Collector current

Overall Total power dissipation

Junction temperature

°C

ML3-N2 Package

P_T

100

Marking Symbol: 2Z

Internal Connection

T_j

125

Storage temperature

T_stg

−55 to +125

°C

R₁(2.2 kΩ)

R₂

(47 kΩ)

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Collector to base voltage

Collector to emittter voltage

Collector cutoff current

Symbol

V_CBO

V_CEO

I_CBO

I_CEO

Conditions

Min

Typ

Max

Unit

I_C= 10 µA, I_E= 0

I_C= 2 mA, I_B= 0

V_CB= 50 V, I_E= 0

0.1

0.5

0.2

µA

V_CE= 50 V, I_B= 0

Emitter cutoff current

I_EBO

V_EB= 6 V, I_C= 0



Forward current transfer ratio

Collector to emitter saturation voltage

High level output voltage

Low level output voltage

Input resistance

h_FE

V_CE= 10 V, I_C= 5 mA

I_C= 10 mA, I_B= 0.3 mA

V_CC= 5 V, V_B= 0.5 V, R_L= 1 kΩ

V_CC= 5 V, V_B= 2.5 V, R_L= 1 kΩ

4.9

V_CE(sat)

V_OH

0.25

V_OL

0.2

R₁

−30%

2.2

0.047

150

+30%

kΩ



Resistance ratio

R₁/ R₂

f_T

Gain bandwidth product

V_CB= 10 V, I_E= −2 mA, f = 200 MHz

MHz

Publication date: July 2002

SJH00061AED

12 3

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