Datasheet > UNR7231(UN7231)

UNR7231(UN7231)

更新时间： 2024-09-14 23:39:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	61K
描述
UNR7231 (UN7231) - NPN Transistor with built-in Resistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

UNR7231(UN7231) 数据手册

Transistors with built-in Resistor

UNR7231 (UN7231)

Silicon NPN epitaxial planer transistor

Unit: mm

For amplification of the low frequency

1.5 0.1

4.5 0.1

1.6 0.2

Features

High forward current transfer ratio h_FE

45°

Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

0.4 0.08

0.4 0.04

0.5 0.08

1.5 0.1

3.0 0.15

Absolute Maximum Ratings (Ta=25˚C)

marking

Parameter

Symbol

V_CBO

V_CEO

I_C

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Collector current

1 : Emitter

2 : Collector

3 : Base

0.7

EIAJ : SC–62

Mini-Power Type Package

Peak collector current

Total power dissipation

Junction temperature

Storage temperature

I_CP

1.5

P_T*

1.0

˚C

Marking Symbol: IC

Internal Connection

T_j

150

T_stg

–55 to +150

* Printed circuit board: Copper foil area of 1cm²or more and thickness of

1.7mm for the collector portion.

(

)

R1 1kΩ

47kΩ

(

)

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

I_CBO

Conditions

V_CB= 15V, I_E= 0

min

typ

max

Unit

µA

Collector cutoff current

I_CEO

V_CE= 15V, I_B= 0

0.5

Emitter cutoff current

I_EBO

V_EB= 14V, I_C= 0

Collector to base voltage

Collector to emitter voltage

Forward current transfer ratio

V_CBO

V_CEO

h_FE

I_C= 10µA, I_E= 0

I_C= 1mA, I_B= 0

V_CE= 10V, I_C= 150mA*

I_C= 500mA, I_B= 5mA*

V_CB= 20V, I_E= –20mA, f = 200MHz

800

2100

0.4

Collector to emitter saturation voltage V_CE(sat)

Transition frequency

Input resistance

f_T

MHz

kΩ

R₁

0.7

1.3

Resistance ratio

R₁/R₂

0.016

0.021

0.025

*Pulse measurement

Note.) The Part number in the Parenthesis shows conventional part number.

12 3

中文翻译

下载PDF

与UNR7231(UN7231)相关器件

型号	品牌	获取价格	描述	数据表
UNR7231\|UN7231	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR8231	ETC	获取价格	TRANSISTOR \| 20V V(BR)CEO \| 700MA I(C) \| SC-71
UNR8231(UN8231)	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR8231/UNR8231A(UN8231/UN8231A)	ETC	获取价格	UNR8231/UNR8231A (UN8231/UN8231A) - NPN Transistor with built-in Resistor
UNR8231\|UN8231	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR8231A	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 700MA I(C) \| SC-71
UNR8231A(UN8231A)	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR8231A\|UN8231A	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR9110	PANASONIC	获取价格	Silicon PNP epitaxial planer transistor
UNR9110G	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO