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UNR8231A|UN8231A

更新时间： 2024-09-14 23:39:35
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
3页 81K
描述
Composite Device - Transistors with built-in Resistor

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UNR8231A|UN8231A 数据手册

 浏览型号UNR8231A|UN8231A的Datasheet PDF文件第2页浏览型号UNR8231A|UN8231A的Datasheet PDF文件第3页 
Transistors with built-in Resistor  
UNR8231/8231A (UN8231/8231A)  
Silicon NPN epitaxial planar type  
Unit: mm  
6.9 0.1  
4.0  
2.5 0.1  
(0.8)  
For switching  
0.7  
■ Features  
• High forward current transfer ratio hFE  
0.65 max.  
•
•
Resistor built-in type, allowing downsizing of the equipment  
and reduction of the number of parts  
Available in a type with radial taping  
■ Absolute Maximum Ratings Ta = 25°C  
+0.10  
+0.10  
Parameter  
Symbol  
Rating  
Unit  
0.45  
0.45  
–0.05  
–0.05  
1.05 0.05  
Collector-base voltage UNR8231  
VCBO  
20  
V
2.5 0.5  
2.5 0.5  
(Emitter open)  
UNR8231A  
UNR8231  
60  
1: Emitter  
2: Collector  
3: Base  
Collector-emitter  
voltage (Base open)  
Collector current  
Peak collector current  
VCEO  
20  
V
1
2
3
UNR8231A  
50  
MT-2-A1 Package  
IC  
ICP  
PT  
0.7  
A
A
Internal Connection  
1.5  
Total power dissipation *  
Junction temperature  
Storage temperature  
1
W
°C  
°C  
R1(1 kΩ)  
C
E
Tj  
150  
B
R2  
(4.7 kΩ)  
Tstg  
−55 to +150  
Note) : Printed circuit board: Copper foil area of 1 cm2 or more, and the  
*
board thickness of 1.7 mm for the collector portion  
■ Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
Conditions  
IC = 10 µA, IE = 0  
Min  
20  
Typ  
Max  
Unit  
Collector-base voltage UNR8231  
VCBO  
V
(Emitter open)  
UNR8231A  
UNR8231  
UNR8231A  
60  
Collector-emitter  
voltage (Base open)  
VCEO  
IC = 1 mA, IB = 0  
20  
V
50  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio *  
Collector-emitter saturation voltage *  
Input resistance  
ICBO  
ICEO  
IEBO  
hFE  
VCB = 15 V, IE = 0  
1
10  
µA  
µA  
mA  
VCE = 15 V, IB = 0  
VEB = 14 V, IC = 0  
0.5  
2100  
0.4  
1.3  
VCE = 10 V, IC = 150 mA  
IC = 500 mA, IB = 5 mA  
800  
0.7  
VCE(sat)  
R1  
V
1.0  
kΩ  
Resistance ratio  
R1/R2  
fT  
0.016 0.021 0.025  
200  
Transition frequency  
VCB = 10 V, IE = −50 mA, f = 200 MHz  
MHz  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Pulse measurement  
*
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: January 2004  
SJH00033BED  
1
123

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